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US 11,145,716 B1Granted
Semiconductor devices with low resistance gate structures
AssigneeGlobalFoundries U.S. Inc.
InventorsRinus Tek Po Lee, Jiehui Shu
Life of this patent
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Abstract
A structure comprises a substrate and a first gate structure and a second gate structure in a dielectric layer over the substrate. The first and second gate structures having a width, the width of the first gate structure is shorter than the width of the second gate structure. The first gate structure comprises a first gate conductor layer and the second gate structure comprises a second gate conductor layer. The first gate conductor layer is made of a different metal from the second gate conductor layer.
Claims19
A structure comprising:
- a substrate;
- a first gate structure and a second gate structure in a dielectric layer over the substrate;
- the first and second gate structures having a width, wherein the width of the first gate structure is shorter than the width of the second gate structure;
- wherein the first gate structure comprises a first gate conductor layer and the second gate structure comprises a second gate conductor layer and a conductive barrier layer;
- wherein the first gate conductor layer is made of a different metal from the second gate conductor layer;
- and
- wherein the conductive barrier layer has a higher resistivity than the first gate conductor layer.
4 more elements
A structure comprising:
- a substrate;
- a first gate structure and a second gate structure in a dielectric layer over the substrate;
- the first and second gate structures having a width, the width of the second gate structure is at least two times longer than the width of the first gate structure;
- wherein the first gate structure comprises a first gate conductor layer and the second gate structure comprises a second gate conductor layer and a conductive barrier layer;
- wherein the first gate conductor layer is made of a different metal from the second gate conductor layer;
- and
- wherein the conductive barrier layer has a higher resistivity than the first gate conductor layer.
4 more elements
A method to fabricate a structure comprising:
- forming a first gate structure and a second gate structure in a dielectric layer over a substrate, the first gate structure having a shorter width than the second gate structure;
- wherein the first gate structure comprises a first gate conductor layer and the second gate structure comprises a second gate conductor layer and a conductive barrier layer;
- wherein the first gate conductor layer is made of a different metal from the second gate conductor layer;
- and
- wherein the conductive barrier layer has a higher resistivity than the first gate conductor layer.
2 more elements
Dependencies are inferred from the claim text.