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US 11,145,715 B2Granted
Semiconductor structure and method of forming same
AssigneeFujian Jinhua Integrated Circuit Co., Ltd.
InventorsYu-Cheng Tung, Yun-Fan Chou, Te-Hao Huang, Hsien-Shih Chu, Feng-Ming Huang
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Abstract
A semiconductor structure and a method of forming the semiconductor structure are disclosed. Through forming an electrically conductive structure on a trench isolation structure, utilization of a space above the trench isolation structure is achievable, which can reduce the space required in a semiconductor integrated circuit to accommodate the electrically conductive structure, thus facilitating dimensional shrinkage of the semiconductor integrated circuit.
Claims19
A semiconductor structure, comprising:
- a substrate;
- a trench structure formed in the substrate;
- a plurality of insulating layers sequentially stacked over an inner surface of the trench structure, an innermost layer of the plurality of insulating layers having a top surface lower than a top surface of the substrate;
- and
- a conductive structure formed on the substrate and located at least partially on the trench structure, the conductive structure comprising a first conductive layer and a second conductive layer, the first conductive layer extending upward beyond the trench structure, the second conductive layer being formed on the first conductive layer,
- wherein the plurality of insulating layers comprise a first insulating layer, a second insulating layer and a third insulating layer, the first and second insulating layers sequentially stacked over the inner surface of the trench structure, the third insulating layer being the innermost layer of the plurality of insulating layers to fill the trench structure, the first conductive layer being at least partially formed on the third insulating layer between side surfaces of the second insulating layer.
3 more elements
A semiconductor structure, comprising:
- a substrate;
- a trench structure formed in the substrate;
- a plurality of insulating layers sequentially stacked over an inner surface of the trench structure, an innermost layer of the plurality of insulating layers having a top surface lower than a top surface of the substrate;
- a conductive structure formed on the substrate and located at least partially on the trench structure, the conductive structure comprising a first conductive layer and a second conductive layer, the first conductive layer extending upward beyond the trench structure, the second conductive layer being formed on the first conductive layer;
- and
- a gate structure formed on the substrate and a dummy gate structure formed on the trench structure, the gate structure and the dummy gate structure each comprising a conductive layer, a top surface of the conductive layer in the gate structure being located above a top surface of the conductive layer in the dummy gate structure,
- wherein the plurality of insulating layers comprise a first insulating layer, a second insulating layer and a third insulating layer, the first and second insulating layers sequentially stacked over the inner surface of the trench structure, the third insulating layer being the innermost layer of the plurality of insulating layers to fill the trench structure.
4 more elements
Dependencies are inferred from the claim text.