Semiconductor apparatus and method for manufacturing the same

A semiconductor apparatus, comprising:

• a power semiconductor device including a semiconductor substrate of a first conductivity type having one main surface and the other main surface facing away from the one main surface;
• a resin film formed so as to at least partially cover the one main surface of the semiconductor substrate;
• and
• a sealing insulating material formed so as to at least partially cover the power semiconductor device and the resin film,
• the power semiconductor device including:
• a first electrode formed so as to cover a first region on the one main surface of the semiconductor substrate;
• a second electrode formed so as to include a region located on the other main surface and overlapping the first region in a planar manner;
• a guard ring of a second conductivity type formed in the one main surface of the semiconductor substrate at a second region outer in a plan view than the first region;
• and
• a non-conductive inorganic film located in the second region and formed so as to cover the guard ring,
• the resin film being formed on a region overlapping the guard ring in a plan view,
• the resin film having a thickness of 35 μm or more at at least a part of the resin film located exactly above the non-conductive inorganic film,
• the resin film being a film of a single layer,
• the resin film having an outermost edge in contact with the one main surface and a concave curved surface that curves from an uppermost surface of the resin film toward a peripheral edge of the one main surface so that a width of the resin film is larger in a direction toward the power semiconductor device than on the uppermost surface, the resin film covering a peripheral corner of the non-conductive inorganic film,
• the outermost edge of the resin film being inside an outermost edge of the semiconductor substrate in a plan view, and
• an entirety of the guard ring is arranged outside of the first electrode in a plan view, and the non-conductive inorganic film is in direct contact with the first electrode.