Capacitor and method for manufacturing capacitor
AssigneeMurata Manufacturing Co., Ltd.
InventorsTomoyuki Ashimine, Hiroshi Nakagawa, Yasuhiro Murase
Life of this patent
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Abstract
A capacitor that includes a substrate having a principal surface; a dielectric film on the principal surface of the substrate; and an electrode layer on the dielectric film. The substrate has a recess structure portion with at least one recess portion in a second region outside a first region where the electrode layer overlaps the dielectric layer when viewed in a plan view from a normal direction of the principal surface of the substrate, and the dielectric film is on the recess structure portion.
Claims15
A capacitor, comprising:
- a substrate having a principal surface, the substrate having a recess structure portion with at least one recess portion;
- a dielectric film on the recess structure portion and the principal surface of the substrate;
- and
- an electrode layer on the dielectric film, the electrode layer being located such that the at least one recess portion is in a second region outside a first region where the electrode layer overlaps the dielectric layer when viewed in a plan view from a normal direction of the principal surface of the substrate,
- wherein the substrate has a trench structure portion in the first region, and the dielectric film is on the trench structure portion,
- wherein the recess structure portion has a plurality of recess portions and a protrusion portion positioned between the plurality of recess portions, and
- wherein a first angle formed on a substrate side by a corner of a protrusion portion of the recess structure portion is smaller than a second angle formed on the substrate side by a corner of a protrusion portion of the trench structure portion.
A method for manufacturing a capacitor, the method comprising:
- preparing an aggregate substrate having a principal surface and having a plurality of first regions and a second region between the plurality of first regions when viewed in a plan view from a normal direction of the principal surface;
- forming a recess structure portion with at least one recess portion in the second region;
- providing a dielectric film on the aggregate substrate in the plurality of first regions and the recess structure portion;
- providing an electrode layer on the dielectric film in the plurality of first regions;
- singulating the plurality of first regions by cutting the aggregate substrate in the second region;
- and
- forming respective trench structure portions in each of the plurality of first regions,
- wherein the dielectric film is on the respective trench structure portions,
- wherein the recess structure portion is formed so as to have a plurality of recess portions and a protrusion portion positioned between the plurality of recess portions, and
- wherein the recess structure portion and the trench structure portion are formed such that a first angle on a substrate side by a corner of a protrusion portion of the recess structure portion is smaller than a second angle on the substrate side by a corner of a protrusion portion of the trench structure portion.
Dependencies are inferred from the claim text.