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US 11,145,710 B1Granted
Electrode/dielectric barrier material formation and structures
AssigneeMicron Technology, Inc.
InventorsSanket S. Kelkar, Christopher W. Petz, Dojun Kim, Matthew N. Rocklein, Brenda D. Kraus
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Abstract
Methods, apparatuses, and systems related to forming a barrier material between an electrode and a dielectric material are described. An example method includes forming a dielectric material on a bottom electrode material of a storage node in a semiconductor fabrication process. The method further includes forming a barrier material on the dielectric material to reduce oxygen vacancies in the dielectric material. The method further includes forming a top electrode on the barrier material.
Claims14
A method, comprising:
- depositing a barrier material, as a bi-layer material having layers of different oxygen content, on a bottom electrode material of a storage node in a semiconductor fabrication process, wherein depositing the barrier material as the bi-layer material comprises:
- depositing a first layer in contact with the bottom electrode material having a first oxygen content;
- depositing a second layer on the first layer, wherein the second layer has a second oxygen content which is lower than the first oxygen content;
- and
- depositing the barrier material comprises flowing oxygen into the semiconductor processing chamber using an atomic layer deposition (ALD) process in alternating iterations with flowing titanium or nitrogen precursors for a time range of between 0 to 600 seconds;
- depositing a dielectric material on the barrier material;
- and
- depositing a top electrode material on the dielectric material.
5 more elements
A method, comprising:
- forming a first barrier material on a bottom electrode material of a storage node in a semiconductor fabrication process, wherein the first barrier layer has a first oxygen content;
- forming a dielectric material on the first barrier material;
- forming a second barrier material on the dielectric material, wherein the second barrier layer has a second oxygen content, which is lower than the first oxygen content;
- and
- forming a top electrode material on the second barrier material, wherein forming the first and the second barrier materials comprises forming a TiOxNy film as the barrier material to increase a breakdown voltage of the dielectric material, and increase an effective work function in a range of between 0.0 and 0.5 eV.
2 more elements
A method, comprising:
- forming a dielectric material on a bottom electrode material of a storage node in a semiconductor fabrication process;
- forming a barrier material, as a bi-layer material having layers of different oxygen content, on the dielectric material to reduce oxygen vacancies, wherein forming the barrier material as the bi-layer material comprises:
- forming a first layer in contact with the dielectric material having a first oxygen content;
- forming a second layer on the first layer, wherein the second layer has a second oxygen content which is lower than the first oxygen content;
- and
- forming the barrier material as a titanium oxynitride (TiOxNy) film material on the bottom electrode, wherein the TiOxNy film material has an oxygen content in the TiOxNy film material in a range of between 3-60 atomic % of the TiOxNy film material;
- and
- forming a top electrode on the barrier material, in contact with the second layer.
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An apparatus, comprising:
- a dielectric material to a semiconductor structure;
- a TiOxNy film formed on the dielectric material, wherein the TiOxNy film is formed by:
- flowing a titanium tetrachloride (TiCl4) precursor in a deposition chamber over a dielectric material in an atomic layer deposition (ALD) process;
- flowing an ammonia (NH3) precursor in the deposition chamber;
- flowing a purging inert gas;
- repeating iterations of the TiCl4 precursor and the NH3 precursor;
- and
- flowing an oxygen precursor in the deposition chamber in alternating iterations with the TiCl4 precursor and the NH3 precursor to control oxygen content and a thickness of the TiOxNy film, wherein the TiOxNy film has a gradient in oxygen content on the dielectric material;
- and
- an electrode formed on the TiOxNy film.
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Dependencies are inferred from the claim text.