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US 11,145,690 B2Granted
Memory device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJau-Yi Wu
Life of this patent
Estimating the term…
Abstract
A memory device includes a dielectric layer, a bottom electrode, an inter-metal dielectric (IMD) layer, a phase change element in the IMD layer, and a top electrode. The bottom electrode is in the dielectric layer. The IMD layer is over first dielectric layer. The phase change element is in the IMD layer. The top electrode is over the phase change element and is separated from the dielectric layer by at least an air gap free of materials of the IMD layer and the phase change element.
Claims20
A memory device, comprising:
- a dielectric layer;
- a bottom electrode in the dielectric layer;
- an inter-metal dielectric (IMD) layer over first dielectric layer;
- a phase change element in the IMD layer;
- and
- a top electrode over the phase change element and separated from the dielectric layer by at least an air gap free of materials of the IMD layer and the phase change element, wherein the IMD layer has a portion extending downwardly from a bottom surface of the top electrode to the dielectric layer.
3 more elements
A memory device, comprising:
- a dielectric layer;
- a bottom electrode in the dielectric layer;
- a phase change element (PCE) over the bottom electrode;
- a top electrode over the phase change element, wherein the phase change element has a top surface having a width less than a width of a bottom surface of the top electrode;
- and
- a polymer residue on the bottom surface of the top electrode.
3 more elements
A memory device, comprising:
- a dielectric layer;
- a bottom electrode in the dielectric layer;
- a phase change element over the bottom electrode;
- a top electrode over the phase change element;
- and
- a polymer residue having a first portion in contact with a bottom surface of the top electrode, a second portion in contact with a sidewall of the phase change element, and a third portion in contact with a top surface of the dielectric layer.
3 more elements
Dependencies are inferred from the claim text.