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US 11,145,686 B2Granted
Semiconductor photodetector device with protection against ambient back light
AssigneeAms AG
InventorsVictor Sidorov, Jong Mun Park, Eugene G. Dierschke
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Abstract
The semiconductor photodetector device comprises a substrate of semiconductor material of a first type of electric conductivity, an epitaxial layer of an opposite second type of electric conductivity, a further epitaxial layer of the first type of electric conductivity and photodetectors. The epitaxial layer functions as a shielding layer for charge carriers (e−, h+ generated by radiation that is incident from a rear side opposite the photodetectors.
Claims8
A semiconductor photodetector device, comprising:
- a substrate of semiconductor material of a first type of electric conductivity,
- an epitaxial layer on the substrate, the epitaxial layer being doped for a second type of electric conductivity, which is opposite to the first type of electric conductivity,
- a further epitaxial layer on the epitaxial layer, the further epitaxial layer being doped for the first type of electric conductivity, the epitaxial layer being arranged between the substrate and the further epitaxial layer,
- an electric conductor shorting the substrate, the epitaxial layer and the further epitaxial layer;
- and
- a photodetector or plurality of photodetectors arranged in the substrate or in the further epitaxial layer.
3 more elements
A semiconductor photodetector device, comprising:
- a substrate of semiconductor material, the substrate being doped for a first type of electric conductivity,
- an epitaxial layer on the substrate, the epitaxial layer being doped for a second type of electric conductivity, which is opposite to the first type of electric conductivity,
- a further epitaxial layer on the epitaxial layer, the further epitaxial layer being doped for the first type of electric conductivity, the epitaxial layer being arranged between the substrate and the further epitaxial layer,
- a trench in the epitaxial layer and the further epitaxial layer, the trench reaching to the substrate,
- an electric conductor in the trench, the electric conductor shorting the substrate, the epitaxial layer and the further epitaxial layer;
- and
- a functional region of the further epitaxial layer, the functional region including a photodetector or plurality of photodetectors and an integrated circuit.
4 more elements
Dependencies are inferred from the claim text.