Hybrid high-k dielectric material film stacks comprising zirconium oxide utilized in display devices

A device structure, comprising:

• a thin film transistor structure comprising source, drain, and gate electrodes formed over a silicon containing insulating layer;
• and
• a capacitor structure comprising top and bottom electrodes, and a hybrid film stack between the top and bottom electrodes, wherein the capacitor structure is formed over the silicon containing insulating layer, the silicon containing insulating layer is formed in direct contact with a substrate, wherein an insulating layer formed in direct contact with the silicon containing insulating layer, and below the gate electrode, and wherein a capacitor layer is formed directly on the gate electrode and the insulating layer, wherein the capacitor layer extends between top and bottom electrodes of the capacitor structure, wherein the capacitor layer comprises a hybrid film stack having an interface layer disposed between and in direct contact with a dielectric layer and a top layer comprising a silicon-containing material, the dielectric layer comprising an amorphous aluminum doped zirconium containing material, wherein the interface layer is at least one of aluminum oxide (Al2O3), aluminum nitride (AlN), aluminum titanium oxide (AlTiO), aluminum zirconium oxide (AlZrO), aluminum oxynitride (AlON), or yttrium oxide (Y2O3), wherein the dielectric layer has a thickness of 250 Å to 900 Å and a current leakage of less than 1E-8 A/cm2.