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US 11,145,677 B2Granted
Fully depleted semiconductor-on-insulator transistors with different buried dielectric layer charges and different threshold voltages
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Shawn P. Fetterolf
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Abstract
According to embodiments of the present invention, a semiconductor device includes a first transistor located on a first fixed charge dielectric layer and a second transistor located on a second fixed charge dielectric layer. The first fixed charge dielectric layer and the second fixed charge dielectric layer are differently charged such that the first transistor and the second transistor have different threshold voltages.
Claims18
A method of forming a semiconductor device, the method comprising:
- depositing a first fixed charge dielectric layer on a semiconductor layer;
- removing a portion of the first fixed charge dielectric layer to form an open area;
- depositing a second fixed charge dielectric layer on the open area;
- forming a first transistor on top of the first fixed charge dielectric layer;
- and
- forming a second transistor on top of the second fixed charge dielectric layer;
- wherein the first fixed charge dielectric layer and the second fixed charge dielectric layer are differently charged such that the first transistor and the second transistor have different threshold voltages.
4 more elements
A method of forming a semiconductor device, the method comprising:
- forming a first transistor on a first fixed charge dielectric layer, the first transistor comprising a first gate over a first channel layer, the first channel layer positioned between the first gate and the first fixed charge dielectric layer;
- and
- forming a second transistor on a second fixed charge dielectric layer, the second transistor comprising a second gate over a second channel layer, the second channel layer positioned between the second gate and the second fixed charge dielectric layer;
- wherein the first fixed charge dielectric layer comprises a fixed positive charge and the second fixed charge dielectric layer comprises a fixed negative charge.
1 more element
Dependencies are inferred from the claim text.