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US 11,145,675 B2Granted
Semiconductor device and manufacturing method of the semiconductor device
AssigneeSK hynix Inc.
InventorsYung Jun Kim, Won Hyo Cha, Byung Soo Park, Sang Tae Ahn, Sung Jae Chung
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Abstract
A semiconductor device includes stack structures each including a first conductive layer, a substrate disposed under the stack structures, first impurity regions disposed in the substrate, and at least one trench passing through the stack structures and disposed above the first impurity regions.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a first impurity region of a first type impurity in a substrate;
- forming a stack structure including a first conductive layer including the first type impurity on the substrate;
- forming a first opening passing through the stack structure and disposed above the first impurity region;
- and
- forming an insulating structure in the first opening,
- wherein the substrate includes a second type impurity different from the first type impurity.
3 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a first impurity region of a first type impurity in a substrate;
- forming a first conductive layer including the first type impurity on the substrate;
- forming a stack structure including first material layers and second material layers disposed on the first conductive layer and alternately stacked on each other;
- forming a first opening passing through the stack structure and disposed above the first impurity region;
- and
- replacing the first material layers with third material patterns through the first opening,
- wherein the substrate includes a second type impurity different from the first type impurity, and at least one third material pattern and the first impurity region are electrically connected.
4 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a first impurity region of a first type impurity in a substrate;
- forming a stack structure including first material layers and second material layers alternately stacked on each other;
- forming a first opening passing through the stack structure and exposing the first impurity region;
- and
- forming a conductive pattern in contact with the first impurity region and material patterns between the second material layers,
- wherein the forming of the conductive pattern and the material patterns comprises:
- removing the first material layers to form second openings between the second material layers;
- forming a third material layer in the first opening and the second openings;
- and
- etching a region of the third material layer which is formed in the first opening, and
- wherein the conductive pattern is a portion of the third material layer remaining in the first opening after the etching of the region of the third material layer.
8 more elements
Dependencies are inferred from the claim text.