Back to results
US 11,145,670 B2Granted
Semiconductor storage device and manufacturing method thereof
AssigneeToshiba Memory Corporation
InventorsYasuhito Yoshimizu, Tomohiko Sugita
Life of this patent
Estimating the term…
Abstract
A semiconductor storage device according to an embodiment comprises a substrate. A stack body having first conductive layers and first insulating layers alternately stacked in a first direction is provided on the substrate. A pillar part extends in the first direction in the stack body and has a memory film. An insulating member extends in the first direction at a position different from that of the pillar part in the stack body. A phosphorus-containing insulator is provided below the stack body and the insulating member.
Claims18
A semiconductor storage device comprising:
- a substrate;
- a stack body provided on the substrate and having first conductive layers and first insulating layers alternately stacked in a first direction;
- a pillar part extending in the first direction in the stack body and having a memory film;
- an insulating member extending in the first direction at a position different from that of the pillar part in the stack body;
- and
- a phosphorus-containing insulator provided below the stack body and the insulating member, the phosphorus-containing insulator connected to the insulating member,
- wherein an end portion of the insulating member is closer to the substrate than an end portion of the pillar part,
- wherein the pillar part is separated from the phosphorus-containing insulator in the first direction by at least one of the first insulating layers.
5 more elements
Dependencies are inferred from the claim text.