Semiconductor devices including a contact structure that contacts a dummy channel structure
AssigneeSamsung Electronics Co., Ltd.
InventorsJoo Won Park, Kyeong Jin Park, Kwang Soo Kim
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Abstract
Semiconductor devices are provided. A semiconductor device includes a substrate and a stacked structure in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked on the substrate. The semiconductor device includes a plurality of dummy channel structures that pass through the stacked structure. Moreover, the semiconductor device includes a contact structure in contact with at least one of the plurality of dummy channel structures adjacent thereto, and in contact with one of the plurality of electrode layers.
Claims20
A semiconductor device comprising:
- a substrate having a cell region and a connection region adjacent to the cell region;
- a stacked structure in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked on the substrate;
- a plurality of cell channel structures in the cell region and passing through the stacked structure;
- a plurality of dummy channel structures in the connection region and passing through the stacked structure;
- and
- a contact structure in the connection region and in direct contact with one of the plurality of electrode layers,
- wherein the contact structure is in direct contact with at least one of the plurality of dummy channel structures adjacent thereto.
A semiconductor device comprising:
- a substrate;
- a stacked structure in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked on the substrate;
- a plurality of dummy channel structures that pass through the stacked structure;
- and
- a contact structure in direct contact with at least one of the plurality of dummy channel structures adjacent thereto, and in direct contact with one of the plurality of electrode layers.
A semiconductor device comprising:
- a substrate;
- a stacked structure in which a plurality of insulating layers and a plurality of electrode layers are alternately stacked on the substrate;
- a plurality of cell channel structures that pass through the stacked structure;
- a plurality of dummy channel structures that pass through the stacked structure and are spaced apart from the plurality of cell channel structures;
- and
- a contact structure in direct contact with at least one of the plurality of dummy channel structures adjacent thereto, and in direct contact with one of the plurality of electrode layers.
Dependencies are inferred from the claim text.