Method for fabricating a ferroelectric memory and method for co-fabrication of a ferroelectric memory and of a resistive memory
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsLaurent Grenouillet, Christelle Charpin-Nicolle, Jean Coignus, Terry Francois, Sébastien Kerdiles
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Abstract
A method of fabrication of a ferroelectric memory including a first electrode, a second electrode and a layer of active material made of hafnium dioxide HfO2 positioned between the first electrode and the second electrode, where the method includes depositing a first electrode layer; depositing the layer of active material; doping the layer of active material; depositing a second electrode layer; wherein the method includes sub-microsecond laser annealing of the layer of doped active material.
Claims14
A method of co-fabrication of a ferroelectric memory and of a resistive memory, the method of co-fabrication comprising:
- depositing a first electrode layer comprising a first zone intended to form a first electrode of the resistive memory and a second zone intended to form a first electrode of the ferroelectric memory, the ferroelectric memory including the first electrode, a second electrode and a layer of active material made of hafnium dioxide HfO2 positioned between the first electrode and the second electrode of the ferroelectric memory, and the resistive memory including the first electrode, a second electrode and a layer of active material made of hafnium dioxide HfO2 positioned between the first electrode and the second electrode of the resistive memory;
- depositing a layer of active material comprising a first zone intended to form the layer of active material of the resistive memory and a second zone intended to form the layer of active material of the ferroelectric memory;
- depositing a mask on the layer of active material;
- removing at least a portion of the mask in the first zone of the layer of active material, leaving the mask in the second zone of the layer of active material;
- doping the layer of active material accomplished by ionic implantation;
- removing the mask;
- depositing a second electrode layer comprising a first zone intended to form the second electrode of the resistive memory and a second zone intended to form the second electrode of the ferroelectric memory;
- sub-microsecond laser annealing of the second zone of the layer of doped active material.
A device constituting of a stack comprising:
- an upper layer comprising at least one ferroelectric memory comprising a first electrode, a second electrode and a layer of active material made of hafnium dioxide HfO2 positioned between the first electrode and the second electrode, the upper layer comprising at least one resistive memory, wherein the ferroelectric memory and the resistive memory are co-fabricated by a method of co-fabrication, and
- a lower layer comprising at least one MOS transistor, wherein at least one MOS transistor vertically covered by one ferroelectric memory.
Dependencies are inferred from the claim text.