Semiconductor structure and method of forming the same
AssigneeNanya Technology Corporation
InventorsYen-Ching Wu, Rou-Wei Wang, Shuo Jia
Life of this patent
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Abstract
A method of forming a semiconductor structure includes following steps. A substrate is formed. The substrate has an active region, an isolation structure adjacent to the active region, and a contact on the active region. A dielectric stack is formed on the substrate. The dielectric stack is etched to form an opening such that the contact of the substrate is exposed. The opening has a bottom portion and a top portion communicated to the bottom portion. The dielectric stack is etched again to expand the bottom portion of the opening.
Claims16
A method of forming a semiconductor structure, comprising:
- forming a substrate, wherein the substrate has an active region, an isolation structure adjacent to the active region, and a contact on the active region;
- forming a dielectric stack on the substrate, wherein forming the dielectric stack comprises:
- forming a first nitride structure over the substrate;
- forming a first oxide structure over the substrate;
- forming a second nitride structure over the first oxide structure;
- forming a second oxide structure over the first oxide structure;
- and
- forming a third nitride structure over the second oxide structure;
- etching the dielectric stack to form an opening such that the contact of the substrate is exposed, wherein the opening has a bottom portion and a top portion communicated to the bottom portion;
- and
- etching the dielectric stack again to expand the bottom portion of the opening.
A semiconductor structure, comprising:
- a substrate having an action region, an isolation structure adjacent to the active region, and a contact on the active region;
- a dielectric stack on the substrate, wherein the dielectric stack further comprises:
- a first nitride structure over the substrate;
- a first oxide structure over the substrate;
- a second nitride structure over the first oxide structure;
- a second oxide structure over the first oxide structure;
- and
- a third nitride structure over the second oxide structure;
- and
- a conductive structure surrounded by the dielectric stack, wherein the conductive structure has a bottom portion and a top portion on the bottom portion, and a top region of the bottom portion of the conductive structure is wider than a bottom region of the top portion of the conductive structure.
Dependencies are inferred from the claim text.