Transistors, arrays of transistors, arrays of memory cells individually comprising a capacitor and an elevationally-extending transistor, and methods of forming an array of transistors

An array of transistors, comprising:

• transistors individually comprising:
• semiconductor material that is generally L-shaped or generally mirror L-shaped in at least one straight-line vertical cross-section thereby having an elevationally-extending stem and a base extending horizontally from a lateral side of the stem above a bottom of the stem, the semiconductor material of the stem comprising an upper source/drain region and a channel region there-below;
• at least one of (a) and (b), where
• (a):
• the semiconductor material of the stem comprises a lower source/drain region below the channel region;
• and
• (b):
• the semiconductor material of the base comprises a lower source/drain region;
• a gate operatively laterally adjacent the channel region of the stem;
• individual of said gates are an individual portion of individual wordlines that interconnect individual of the transistors along that individual wordline;
• individual pairs of immediately-laterally-adjacent transistors, one individual of the semiconductor material within each pair of the immediately-laterally-adjacent transistors being generally L-shaped in the at least one straight-line vertical cross-section, the other individual semiconductor material within each pair of the immediately-laterally-adjacent transistors being generally mirror L-shaped in the at least one straight-line vertical cross-section;
• the pairs of the immediately-laterally-adjacent transistors are further laterally apart from one another than are individual of the transistors within each pair of the immediately-laterally-adjacent transistors;
• and
• the bases of the respective immediately-laterally-adjacent transistors in the pairs extending horizontally toward one another from their respective stem.