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US 11,145,651 B2Granted
Transistor gate arrangement to modify driver signal characteristics
AssigneeArm Limited
InventorsYew Keong Chong, Sriram Thyagarajan, Kumaraswamy Ramanathan, Damayanti Datta
Life of this patent
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Abstract
Briefly, embodiments of claimed subject matter relate to devices and methods for modifying, such as decreasing rise time and/or fall time, of a driver signal output. To achieve such modifications in driver output signals, additional gates may be positioned at PMOS and/or NMOS regions of a semiconductor film. In addition, at least in particular embodiments, etching of portions of one or more semiconductor regions may increase compressive or tensile stress, which may further operate to modify driver output signals.
Claims19
A method of providing an electrical signal, comprising;
- forming a semiconductor film having a plurality of localized diffusion regions;
- forming gate regions corresponding to the plurality of localized diffusion regions, the gate regions being configured to control current conducted through the plurality of localized diffusion regions from an input node to an output signal node;
- forming one or more additional gate regions uncoupled to the output signal node;
- and
- removing at least a portion of at least one localized diffusion region of the plurality of localized diffusion regions.
2 more elements
A method of providing an electrical signal, comprising;
- forming a semiconductor film having a plurality of localized diffusion regions;
- forming gate regions corresponding to the plurality of localized diffusion regions, the gate regions being configured to control current conducted through the plurality of localized diffusion regions from an input node to an output signal node;
- forming one or more additional gate regions uncoupled to the output signal node;
- and
- forming a discontinuity in the one or more additional gate regions between a PMOS region of the semiconductor film and a NMOS region of the semiconductor film.
2 more elements
A device, comprising:
- a semiconductor film having a plurality of localized diffusion regions;
- a plurality of gate regions formed over the semiconductor film, wherein the plurality of gate regions is configured to control current conducted through the plurality of localized diffusion regions to an output signal node based on a signal at an input signal node;
- and
- one or more additional gate regions formed over the semiconductor film, wherein the one or more additional gate regions are uncoupled from the output signal node, wherein the one or more additional gate regions comprise one or more portions having a greater impedance than the plurality of gate regions.
1 more element
A device, comprising:
- a semiconductor film having a plurality of localized diffusion regions;
- a plurality of gate regions formed over the semiconductor film, wherein the plurality of gate regions is configured to control current conducted through the plurality of localized diffusion regions to an output signal node based on a signal at an input signal node;
- one or more additional gate regions formed over the semiconductor film, wherein the one or more additional gate regions are uncoupled from the output signal node;
- and
- one or more etched regions in the one or more additional gate regions between a PMOS region of the semiconductor film and a NMOS region of the semiconductor film.
2 more elements
A method, comprising:
- forming a semiconductor film having a plurality of localized diffusion regions;
- forming a plurality of signal input conductors disposed over the semiconductor film, wherein the plurality of signal input conductors is configured to conduct current to the plurality of localized diffusion regions;
- forming a plurality of gate regions over the semiconductor film, wherein the plurality of gate regions is configured to control the current conducted through the plurality of localized diffusion regions to an output signal node based on a signal at an input signal node;
- forming one or more additional gate regions over the semiconductor film, wherein the one or more additional gate regions are uncoupled from the output signal node;
- and
- removing a portion of a respective localized diffusion region of the plurality of localized diffusion regions.
3 more elements
Dependencies are inferred from the claim text.