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US 11,145,648 B2Granted
Enhancement/depletion device pairs and methods of producing the same
AssigneeIntel Corporation
InventorsSansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Paul B. Fischer
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Abstract
Enhancement/depletion device pairs and methods of producing the same are disclosed. A disclosed example multilayered die includes a depletion mode device that includes a first polarization layer and a voltage tuning layer, and an enhancement mode device adjacent the depletion mode device, where the enhancement mode device includes a second polarization layer, and where the second polarization layer includes an opening corresponding to a gate of the enhancement mode device.
Claims20
A die comprising:
- a depletion mode device comprising a first source and a first drain, and a first portion of a polarization layer and a voltage tuning layer both between the first source and the first drain;
- and
- an enhancement mode device adjacent the depletion mode device, the enhancement mode device comprising a second source and a second drain, and a second portion of the polarization layer between the second source and the second drain, wherein the enhancement mode device is absent the voltage tuning layer between the second source and the second drain.
An integrated circuit device comprising:
- a plurality of device pairs, a first device pair of the plurality of device pairs comprising:
- a depletion mode device comprising a first source and a first drain, and a first portion of a polarization layer and a voltage tuning layer both between the first source and the first drain;
- and
- an enhancement mode device electrically coupled to the depletion mode device, the enhancement mode device comprising a second source and a second drain, and a second portion of the polarization layer between the second source and the second drain, wherein the enhancement mode device is absent the voltage tuning layer between the second source and the second drain.
1 more element
A die comprising:
- a depletion mode device over a substrate, the depletion mode device comprising a first portion of a polarization layer and a voltage tuning layer on the first portion of the polarization layer, wherein the first portion of the polarization layer and the voltage tuning layer both extend from a first source to a first drain of the depletion mode device, and the depletion mode device further comprises a gate structure on the voltage tuning layer;
- an enhancement mode device over the substrate, the enhancement mode device comprising a second portion of the polarization layer extending between a second source and a second drain of the enhancement mode device, wherein the enhancement mode device is absent the voltage tuning layer between the second source and the second drain.
Dependencies are inferred from the claim text.