Semiconductor device
AssigneeHitachi Automotive Systems, Ltd.
InventorsShinichirou Wada, Katsumi Ikegaya
Life of this patent
Estimating the term…
Abstract
Restraining a reduction in an electric current detection accuracy, which is due to the temperature difference between an output MOS transistor and a sense MOS transistor, and easing a limitation on the layout of the sense MOS transistor. A semiconductor device includes: an output MOS transistor that has an output transistor portion including a source, a gate, and a drain formed on a semiconductor chip, and outputs an electric current for driving an external load; and a sense MOS transistor that has a sense transistor portion including a source, a gate, and a drain formed on the semiconductor chip, and having a width equal to a transverse width of the output transistor portion, and that detects the electric current output from the output MOS transistor.
Claims7
A semiconductor device comprising:
- an output MOS transistor that has an output transistor portion including a source, a gate, and a drain formed on a semiconductor chip, and that outputs an electric current for driving an external load;
- and
- a sense MOS transistor that has a sense transistor portion including a source, a gate, and a drain formed on the semiconductor chip, and having a width equal to a transverse width of the output transistor portion, and that detects the electric current output from the output MOS transistor,
- wherein
- the sense transistor portion is disposed longitudinally in line with the output transistor portion such that a transverse side of the output transistor portion and a side of the sense transistor portion, the side having a same width as the transverse width of the output transistor portion, are adjacent to each other,
- and wherein
- a plurality of the output transistor portions are provided, and
- the sense transistor portion is disposed such that a side of the sense transistor portion, the side having a same width as the transverse width of the output transistor portion, is adjacent to a transverse side of either one of the output transistor portions.
A semiconductor device comprising:
- an output MOS transistor that has an output transistor portion including a source, a gate, and a drain formed on a semiconductor chip, and that outputs an electric current for driving an external load;
- and
- a sense MOS transistor that has a sense transistor portion including a source, a gate, and a drain formed on the semiconductor chip, and having a width equal to a transverse width of the output transistor portion, and that detects the electric current output from the output MOS transistor,
- wherein
- each of the output transistor portion and the sense transistor portion has four sides surrounded by electrically insulative heat insulators, and
- wherein
- two of the output transistor portions are disposed longitudinally in line with the output transistor portion in sandwiching relation to the sense transistor portion such that a transverse side of the output transistor portion and a side of the sense transistor portion, the side having a same width as the transverse width of the output transistor portion, are adjacent to each other.
Dependencies are inferred from the claim text.