Multi-stack three-dimensional memory devices
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsLi Hong Xiao, Bin Hu
Life of this patent
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Abstract
Embodiments of three-dimensional (3D) memory devices having multiple memory stacks and methods for forming the 3D memory devices are disclosed. In an example, a 3D memory device includes a first device chip, a second device chip, and a bonding interface. The first device chip includes a peripheral device and a first interconnect layer. The second device chip includes a substrate, two memory stacks disposed on opposite sides of the substrate, two memory strings each extending vertically through one of the two memory stacks, and a second interconnect layer. The bonding interface is formed vertically between the first interconnect layer of the first device chip and the second interconnect layer of the second device chip.
Claims20
A method for forming a three-dimensional (3D) memory device, comprising:
- forming a peripheral device on a first chip substrate;
- forming a first interconnect layer above the peripheral device on the first chip substrate;
- forming a memory stack comprising two memory decks formed one over another on a second chip substrate, wherein each memory decks has a memory string extending vertically through it;
- forming a second interconnect layer above the memory stack;
- and
- bonding the first chip substrate and the second chip substrate at a bonding interface between the first interconnect layer and the second interconnect layer,
- wherein the bonding includes hybrid bonding.
A three-dimensional (3D) memory device, comprising:
- a first device chip, comprising:
- a first interconnect layer;
- a peripheral device;
- and
- a first memory stack;
- a second device chip, comprising:
- a second memory stack comprising two memory decks disposed one over another;
- two memory strings each extending vertically through one of the two memory decks;
- and
- a second interconnect layer;
- and
- a bonding interface formed vertically between the first interconnect layer of the first device chip and the second interconnect layer of the second device chip.
A three-dimensional (3D) memory device, comprising:
- a first device chip, comprising:
- a first interconnect layer;
- a first memory stack;
- and
- a contact extending vertically through the first memory stack of the first device chip;
- a second device chip, comprising:
- a second memory stack comprising two memory decks disposed one over another;
- two memory strings each extending vertically through one of the two memory decks;
- and
- a second interconnect layer;
- and
- a bonding interface formed vertically between the first interconnect layer of the first device chip and the second interconnect layer of the second device chip.
Dependencies are inferred from the claim text.