Power device with carrier lifetime zone
AssigneeSemiconductor Components Industries, LLC
InventorsTakumi Hosoya, Hiromichi Inenaga, Seiji Miyoshi
Life of this patent
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Abstract
A power device includes a substrate including a drift layer and having a first region and a second region, the drift layer having impurities of a first type; a switch formed in the first region; a diode formed in the second region; a metal structure formed over a surface of the substrate, the metal structure having a first thickness over the first region of the substrate and a second thickness over the second region of the substrate, the first thickness and second thickness having at least 3 um in thickness difference; and a zone provided in the drift layer in the second region of the substrate, the zone having impurities of a second type that is different from the first type.
Claims20
A power device, comprising:
- a substrate including a drift layer and having a first region and a second region, the drift layer having impurities of a first type;
- a switch formed in the first region;
- a diode formed in the second region;
- a metal structure formed over a front side of the substrate, the metal structure includes an electrode and an implantation mask that is formed on the electrode, the metal structure having a first thickness over the first region of the substrate and a second thickness over the second region of the substrate, the first thickness and second thickness having at least 3 um in thickness difference;
- and
- a zone provided in the drift layer in the second region of the substrate, the zone having impurities of a second type that is different from the first type.
A power device, comprising:
- a substrate including a drift layer and having a first region and a second region, the drift layer having impurities of a first type;
- a switch formed in the first region;
- a diode formed in the second region;
- a metal structure formed over a surface of the substrate, the metal structure having a first thickness over the first region of the substrate and a second thickness over the second region of the substrate, the first thickness and second thickness having at least 3 um in thickness difference;
- and
- a zone provided in the drift layer in the second region of the substrate, the zone having impurities of a second type that is different from the first type,
- wherein the surface of the substrate is a backside of the substrate, and the metal structure is a metal layer having a groove configured to allow impurities to be implanted into the second region of the substrate to form the zone.
A power device, comprising:
- a switch provided in a first region of a substrate;
- a diode formed in a second region of the substrate;
- first and second metal electrodes formed over first and second surfaces of the substrate, respectively;
- an implantation mask formed on the first metal electrode to prevent impurities from being implanted into the first region;
- and
- a zone provided in the second region of the substrate, the zone having impurities implanted in the second region to improve a switching speed of the diode,
- wherein a metal structure includes the implantation mask and the first metal electrode, the metal structure having a first thickness over the first region of the substrate and a second thickness over the second region of the substrate, the first thickness and second thickness having at least 3 um in thickness difference.
Dependencies are inferred from the claim text.