Semiconductor package and manufacturing method thereof

A semiconductor package, comprising:

• a semiconductor die, at least one semiconductor die stack and at least one dummy die, wherein the semiconductor die, the at least one semiconductor die stack and the at least one dummy die are laterally separated from one another, and a sidewall of the semiconductor die faces toward the at least one semiconductor die stack and the at least one dummy die;
• an encapsulant, laterally encapsulating the semiconductor die, the at least one semiconductor die stack and the at least one dummy die, wherein a Young's modulus of the at least one dummy die is greater than a Young's modulus of the encapsulant, and a sidewall of the at least one dummy die is substantially coplanar with a sidewall of the encapsulant;
• a redistribution structure, disposed at a bottom side of the encapsulant, and electrically connected to the semiconductor die and the at least one semiconductor die stack;
• a package substrate, wherein the redistribution structure is attached on the package substrate, and electrically connected to a routing structure of the package substrate;
• and
• a heat dissipation structure, disposed on the package substrate, wherein at least a portion of the heat dissipation structure laterally surrounds the redistribution structure and the encapsulant.

A manufacturing method of a semiconductor package, comprising:

• encapsulating a first semiconductor device, at least one second semiconductor device and a plurality of dummy dies by an encapsulant, so as to form a reconstructed wafer structure having the first semiconductor device, the at least one second semiconductor device and the plurality of dummy dies, wherein a Young's modulus of the plurality of dummy dies is greater than a Young's modulus of the encapsulant, wherein the first semiconductor device, the at least one second semiconductor device and the plurality of dummy dies are laterally separated from one another, and a sidewall of the first semiconductor device faces toward the at least one second semiconductor device and the plurality of dummy dies;
• forming a redistribution structure over the reconstructed wafer structure, wherein the redistribution structure is electrically connected to the first semiconductor device and the at least one second semiconductor device;
• singulating the reconstructed wafer structure and the redistribution structure through at least one of the plurality of dummy dies, to form a singulated package structure;
• attaching the singulated package structure onto a package substrate;
• and
• disposing a heat dissipation structure over the package substrate, wherein the singulated package structure is laterally surrounded by at least a portion of the heat dissipation structure.