Method for forming bump structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLi-Guo Lee, Yung-Sheng Liu, Yi-Chen Liu, Yi-Jen Lai, Chun-Jen Chen, Hsi-Kuei Cheng
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Abstract
Methods for forming semiconductor structures are provided. The method for forming a semiconductor structure includes forming a metal pad over a first substrate and forming a resist layer having an opening over the metal layer. The method for forming a semiconductor structure further includes forming a conductive pillar and a solder layer over the conductive pillar in the opening of the resist layer and removing the resist layer. The method for forming a semiconductor structure further includes removing a portion of the conductive pillar so that the conductive pillar has an angled sidewall.
Claims20
A method for forming a semiconductor structure, comprising:
- forming a metal layer over a first substrate;
- forming a seed layer over the metal layer;
- forming a resist layer having an opening over the metal layer;
- forming a conductive pillar and a solder layer over the conductive pillar in the opening of the resist layer;
- removing the resist layer;
- removing a portion of the conductive pillar so that the conductive pillar has an angled sidewall, wherein the angled sidewall includes a first sidewall at a top portion of the conductive pillar and a second sidewall at a bottom portion of the conductive pillar, the first sidewall and the second sidewall extend in different directions, and the second sidewall and a sidewall of the seed layer are aligned with each other in an identical direction;
- and
- performing a reflowing process to the solder layer, so that a first portion of the first sidewall of the conductive pillar is covered by the solder layer, a second portion of the first sidewall of the conductive pillar is exposed from the solder layer, and the first portion of the first sidewall and the second portion of the first sidewall continuously extend in an identical direction.
A method for forming a semiconductor structure, comprising:
- forming a metal pad over a first substrate;
- forming a passivation layer over the metal pad;
- forming a polymer layer over the passivation layer;
- forming a seed layer over the metal pad and the passivation layer, wherein the seed layer is in contact with the polymer layer;
- forming a conductive pillar over the metal pad;
- forming a solder layer over the conductive pillar;
- and
- etching the conductive pillar and the seed layer to narrow a neck portion of the conductive pillar, so that a width of the neck portion is smaller than a width of a top surface of the etched conductive pillar, after the step of etching the conductive pillar and the seed layer, a portion of the metal pad is exposed from the seed layer and the passivation layer, and another portion of the metal pad is covered by the passivation layer, the polymer layer is in contact with the metal pad and is spaced apart from the seed layer after etching the conductive pillar and the seed layer.
A method for forming a semiconductor structure, comprising:
- forming a metal pad over a first substrate;
- forming a resist layer having an opening with a substantially straight sidewall over the metal pad;
- filling a conductive material and a solder material in the opening of the resist layer to form a conductive pillar over the metal pad and a solder layer over the conductive pillar;
- removing the resist layer;
- etching the conducive pillar so that a first sidewall of a top portion of the conductive pillar and a second sidewall of a bottom portion of the conductive pillar extend along different directions;
- reflowing the solder layer to cover a portion of the first sidewall, wherein a connection point between the first sidewall and the second sidewall is exposed from the solder layer;
- and
- bonding a conductive structure to the conductive pillar through the solder layer, wherein at least a portion of a sidewall of the conductive structure is covered by the solder layer.
Dependencies are inferred from the claim text.