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US 11,145,605 B2Granted
Semiconductor device and method for fabricating the same
AssigneeNanya Technology Corporation
InventorJar-Ming Ho
Life of this patent
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Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate and a first crack-detecting structure positioned in the substrate and comprising a first capacitor unit. The first capacitor unit comprises a first bottom conductive layer positioned in the substrate, a first capacitor insulating layer surrounding the first bottom conductive layer, and a first buried plate surrounding the first capacitor insulating layer.
Claims12
A semiconductor device, comprising:
- a substrate;
- and
- a first crack-detecting structure positioned in the substrate and comprising a first capacitor unit;
- wherein the first capacitor unit comprises a first bottom conductive layer positioned in the substrate, a first capacitor insulating layer surrounding the first bottom conductive layer, and a first buried plate surrounding the first capacitor insulating layer;
- a plurality of stress-dissipating structures positioned above the substrate and next to the first crack-detecting structure;
- a plurality of guard structures positioned above the substrate and adjacent to the plurality of stress-dissipating structures;
- a seal ring positioned on the substrate and between the plurality of stress-dissipating structures and the plurality of guard structures;
- wherein the first crack-detecting structure further comprises a first switch unit positioned adjacent to the first capacitor unit and electrically coupled to the first capacitor unit.
5 more elements
A semiconductor device, comprising:
- a substrate;
- a first crack-detecting structure positioned in the substrate and comprising a first capacitor unit, wherein the first capacitor unit comprises a first bottom conductive layer positioned in the substrate, a first capacitor insulating layer surrounding the first bottom conductive layer, and a first buried plate surrounding the first capacitor insulating layer;
- a second crack-detecting structure positioned next to the first crack-detecting structure and comprising a second capacitor unit, wherein the second capacitor unit comprises a second bottom conductive layer positioned next to the first bottom conductive layer, a second capacitor insulating layer surrounding the second bottom conductive layer, and a second buried plate surrounding the second capacitor insulating layer;
- and
- a connecting doped region positioned in the substrate and between the first capacitor unit and the second capacitor unit, wherein the connecting doped region is electrically coupled to the second capacitor unit;
- wherein the first capacitor unit further comprises a first collar conductive layer positioned on the first bottom conductive layer, wherein the first capacitor insulating layer is attached to lower portions of sidewalls of the first collar conductive layer.
3 more elements
Dependencies are inferred from the claim text.