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US 11,145,598 B2Granted
Lattice bump interconnect
AssigneeTexas Instruments Incorporated
InventorsBenjamin Stassen Cook, Nazila Dadvand, Archana Venugopal, Luigi Colombo
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Abstract
An interconnect structure for a semiconductor device includes a plurality of unit cells. Each unit cell is formed of interconnected conducting segments. The plurality of unit cells forms a conducting lattice.
Claims18
An interconnect structure for a semiconductor device, the interconnect structure comprising:
- a plurality of unit cells, wherein:
- each unit cell is formed of interconnected conducting segments;
- the plurality of unit cells forms a conducting lattice;
- an end of the conducting lattice contacts a portion of a lead frame;
- and
- the plurality of unit cells does not include solder.
3 more elements
A semiconductor package structure comprising:
- a semiconductor device comprising at least one conducting pillar extending directly from the semiconductor device;
- and
- an interconnect structure comprising a plurality of unit cells, wherein each unit cell is formed of interconnected conducting segments, and wherein the plurality of unit cells forms a conducting lattice;
- wherein a first end of the interconnect structure is directly connected to the at least one conducting pillar, and a second end of the interconnect structure, opposite to the first end is directly connected to a portion of a lead frame;
- and wherein the at least one conducting pillar includes copper.
2 more elements
A semiconductor package comprising:
- a semiconductor device;
- at least one bump directly extending from the semiconductor device;
- a plurality of unit cells forming a conducting lattice connected to the at least one bump;
- and
- a portion of a lead frame directly connected to the conducting lattice, wherein the conductive lattice is between the portion of the lead frame and the at least one bump.
2 more elements
Dependencies are inferred from the claim text.