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US 11,145,597 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeRenesas Electronics Corporation
InventorsShinichi Kuwabara, Yasutaka Nakashiba, Teruhiro Kuwajima
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Abstract
A semiconductor device includes a first semiconductor chip on which a first circuit is formed and a second semiconductor chip on which two circuits are formed. In the first semiconductor chip, a first inductor on the transmitting side electrically connected with the first circuit and a second inductor on the receiving side electrically connected with the second circuit via the bonding wire are formed. In plan view, the first inductor and the second inductor are disposed so as not to overlap each other, and are arranged along each other.
Claims10
A semiconductor device comprising:
- a semiconductor substrate;
- a multi-layer wiring structure formed to cover the semiconductor substrate, the multi-layer wiring structure including:
- a plurality of wirings;
- and
- a plurality of interlayer insulating films electrically isolating the plurality of wiring, respectively;
- a first circuit driven by a first voltage;
- a second circuit driven by a second voltage greater than the first voltage;
- a first inductor electrically connected with the first circuit, the first inductor being formed in a first interlayer insulating film of the plurality of interlayer insulating films;
- and
- a second inductor electrically connected with the second circuit, the second inductor being formed in a second interlayer insulating film of the plurality of interlayer insulating films, the second interlayer insulating film being different from the first interlayer insulating film,
- wherein, in plan view, the first inductor and the second inductor are disposed such that the first inductor and the second inductor do not overlap each other and are arranged along each other.
8 more elements
Dependencies are inferred from the claim text.