Semiconductor device with integrated capacitor and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChung-Yen Chou
Life of this patent
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Abstract
A method of manufacturing a semiconductor structure includes: providing a substrate; forming a first conductive layer having a first opening over the substrate; depositing a first dielectric layer over the first conductive layer and covering the first opening; forming a second conductive layer having a second opening over the first dielectric layer; depositing a second dielectric layer over the second conductive layer and covering the second opening; performing an etching operation through the second dielectric layer at the second opening and the first dielectric layer at the first opening to form a first via; and forming a first conductive structure in the first via.
Claims20
A method of manufacturing a semiconductor structure, the method comprising:
- providing a substrate;
- forming a first conductive layer having a first opening over the substrate;
- depositing a first dielectric layer over the first conductive layer and covering the first opening;
- forming a second conductive layer having a second opening over the first dielectric layer;
- depositing a second dielectric layer over the second conductive layer and covering the second opening;
- performing an etching operation through the second dielectric layer at the second opening and the first dielectric layer at the first opening to form a first via;
- and
- forming a first conductive structure in the first via.
A method of manufacturing a semiconductor structure, the method comprising:
- providing a substrate;
- forming a first conductive layer over the substrate, the first conductive layer comprising a first opening;
- depositing a first dielectric layer over the first conductive layer and within the first opening;
- forming a second conductive layer over the first dielectric layer and the first conductive layer, the second conductive layer comprising a second opening laterally spaced apart from the first opening;
- forming a second dielectric layer over the second conductive layer, the first dielectric layer and the first conductive layer;
- forming a first via through the second dielectric layer and the first dielectric layer at the first opening;
- and
- forming a second via through the second dielectric layer at the second opening and the first dielectric layer.
A method of manufacturing a semiconductor structure, the method comprising:
- forming a patterned first conductive layer over a substrate, wherein the patterned first conductive layer comprises a planar upper surface and defines a first opening;
- depositing a first dielectric layer over the first patterned conductive layer and within the first opening;
- forming a patterned second conductive layer over the first dielectric layer, wherein the patterned second conductive layer comprises a planar upper surface and defines a second opening;
- depositing a second dielectric layer over the second patterned conductive layer and within the second opening;
- forming a patterned third conductive layer over the second dielectric layer, wherein the patterned third conductive layer comprises a planar upper surface and defines a third opening overlapping the first opening;
- forming a third dielectric layer over the third patterned conductive layer;
- forming a first via through the first patterned conductive layer at the first opening and the third patterned conductive layer at the third opening, the first via exposing the planar upper surface of the first patterned conductive layer and the planar upper surface of the third patterned conductive layer;
- forming a second via through the second patterned conductive layer at the second opening and the third dielectric layer, the second via exposing the planar upper surface of the second patterned conductive layer, and
- forming a first conductive structure and a second conductive structure in the first via and the second via, respectively.
Dependencies are inferred from the claim text.