Semiconductor memory device and method of manufacturing the same

A semiconductor memory device comprising:

• a substrate that includes a first area, a second area, and a third area, the second area being adjacent to the first area in a first direction, the third area being adjacent to the first area in the first direction;
• a first insulating layer disposed in the first area, the second area, and the third area;
• a first wiring disposed on a surface of the first insulating layer in the first area;
• a first memory cell disposed on the first wiring;
• a second wiring disposed on the first memory cell and extending in the first direction;
• and
• a contact connected to the second wiring in the second area, the contact extending in a second direction intersecting with the substrate, wherein
• the surface of the first insulating layer includes:
• a plurality of first surfaces that are disposed in at least one of the second area and the third area and arranged in the first direction;
• and
• a plurality of second surfaces disposed between the plurality of first surfaces, wherein
• the plurality of second surfaces are close to the substrate compared with the plurality of first surfaces or far from the substrate compared with the plurality of first surfaces.