Thermally enhanced electronic packages for GaN power integrated circuits

An electronic power conversion component comprising:

• an electrically conductive package base comprising a source terminal, a drain terminal, at least one I/O terminal and a die-attach pad wherein the source terminal is electrically isolated from the die attach pad;
• a GaN-based semiconductor die having a substrate electrically connected to the die attach pad and including a power transistor having a source and a drain, wherein the source is electrically coupled to the source terminal, the drain is electrically coupled to the drain terminal and the substrate is electrically coupled to a ground through the die attach pad;
• one or more first wirebonds electrically coupling the source to the source terminal and one or more second wirebonds electrically coupling the drain to the drain terminal;
• and
• an encapsulant formed over the GaN-based semiconductor die and at least a top surface of the package base.