Semiconductor device packages with electrical routing improvements and related methods

A semiconductor device package, comprising:

• a die-attach pad;
• a spacer comprising a plate of an electrically conductive material located on the die-attach pad with a dielectric material between the spacer and the die-attach pad;
• a semiconductor die supported on a side of the spacer opposite the die-attach pad, an active surface of the semiconductor die located on a side of the semiconductor die opposite the spacer;
• a first wire bond extending from a bond pad on the active surface, toward a first lateral side of the spacer, to the spacer;
• a second wire bond extending from the spacer, toward a second, different lateral side of the spacer, to a lead finger, wherein each second wire bond extending from the spacer to a respective lead finger extends toward the second, different lateral side;
• a third wire bond extending from the semiconductor die to another, different lead finger;
• and
• an encapsulant material encapsulating the semiconductor die, the spacer, the first wire bond, the second wire bond, the third wire bond, the die-attach pad, and a portion of each lead finger.

A semiconductor device package, comprising:

• a die-attach pad;
• a semiconductor die supported on the die-attach pad, an active surface of the semiconductor die located on a side of the semiconductor die opposite the die-attach pad;
• a spacer comprising an electrically conductive material located on the active surface of the semiconductor die with a dielectric material between the spacer and the semiconductor die;
• a first wire bond extending from a bond pad proximate to a periphery of the semiconductor die on the active surface to the spacer;
• a second wire bond extending from the spacer to a lead finger or the die-attach pad, wherein the bond pad from which the first wire bond extends is located proximate to a first lateral side of the spacer and wherein each second wire bond extending from the spacer to a respective lead finger extends toward a second, different lateral side of the spacer;
• a third wire bond extending front the semiconductor die to another, different lead finger;
• and
• an encapsulant material encapsulating the semiconductor die, the spacer, the first wire bond, the second wire bond, the third wire bond the die-attach pad, and a portion of each lead finger.

A system, comprising:

• a control unit;
• and
• a probe unit operatively connected to the control unit;
• wherein at least one of the control unit and the probe unit comprises a semiconductor device package configured to at least partially process an electrical signal generated by the probe unit, the semiconductor device package comprising:
• a die-attach pad;
• a spacer comprising a plate of an electrically conductive material located on the die-attach pad with a dielectric material between the spacer and the die-attach pad;
• a semiconductor die supported on a side of the spacer opposite the die-attach pad, an active surface of the semiconductor die located on a side of the semiconductor die opposite the spacer;
• a first wire bond extending from a bond pad on the active surface, toward a first lateral side of the associated spacer, to the spacer;
• a second wire bond extending from the spacer, toward a second, different lateral side of the spacer, to a lead finger, wherein each second wire bond extending from the spacer to a respective lead finger extends toward the second, different lateral side;
• a third wire bond extending from the semiconductor die to another, different lead finger;
• and
• an encapsulant material encapsulating the semiconductor die, the spacer, the first wire bond, the second wire bond, the third wire bond, the die-attach pad, and a portion of each lead finger.

A system, comprising:

• a control unit;
• and
• a probe unit operatively connected to the control unit;
• wherein at least one of the control unit and the probe unit comprises a semiconductor device package configured to at least partially process an electrical signal generated by the probe unit, the semiconductor device package comprising:
• a die-attach pad;
• a semiconductor die supported on the die-attach pad, an active surface of the semiconductor die located on a side of the semiconductor die opposite the die-attach pad;
• a spacer comprising an electrically conductive material located on the active surface of the semiconductor die with a dielectric material between the spacer and the semiconductor die;
• a first wire bond extending from a bond pad proximate to a periphery of the semiconductor die on the active surface to the spacer;
• a second wire bond extending from the spacer to a lead finger or the die-attach pad, wherein the bond pad from which the first wire bond extends is located proximate to a first lateral side of the spacer and wherein each second wire bond extending, from the spacer to a respective lead finger extends toward a second, different lateral side of the spacer;
• a third wire bond extending from the semiconductor die to another, different lead finger, and
• an encapsulant material encapsulating the semiconductor die, the spacer, the first wire bond, the second wire bond, the third wire bond the die-attach pad, and a portion of each lead finger.

A method of making a semiconductor device package, comprising:

• placing a semiconductor die on a die-attach pad, an active surface of the semiconductor die located on a side of the semiconductor die opposite the die-attach pad;
• placing a spacer comprising an electrically conductive material on the active surface of the semiconductor die with a dielectric material between the spacer and the semiconductor die;
• forming a first wire bond extending from a bond pad proximate to a periphery of the semiconductor die on the active surface of the semiconductor die to the spacer;
• forming a second wire bond extending from the spacer to a lead finger, wherein the bond pad from which the first wire bond extends is located proximate to a first lateral side of the spacer and wherein each second wire bond extending from the spacer to a respective lead finger extends toward a second, different lateral side of the spacer;
• forming a third wire bond extending from the semiconductor die to another, different lead finger;
• and
• encapsulating the semiconductor die, the spacer, the first wire bond, the second wire bond, the third wire bond, the die-attach pad, and a portion of each lead finger in an encapsulant material.