Semiconductor structure having through-substrate via (TSV) in porous semiconductor region
AssigneeNewport Fab, LLC
InventorDavid J. Howard
Life of this patent
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Abstract
A semiconductor structure includes a semiconductor substrate, a porous semiconductor region within the semiconductor substrate, and through-substrate via (TSV) within the porous semiconductor region. The porous semiconductor region causes the semiconductor structure and/or the TSV to withstand thermal and mechanical stresses. Alternatively, the semiconductor structure includes a semiconductor buffer ring within the porous semiconductor region, and the TSV within the semiconductor buffer ring.
Claims21
A semiconductor structure comprising:
- a semiconductor substrate;
- a porous semiconductor region within said semiconductor substrate, wherein said porous semiconductor region is not a dielectric material;
- a through-substrate via (TSV) within said porous semiconductor region;
- said porous semiconductor region causing said semiconductor structure and/or said TSV to withstand thermal and mechanical stresses.
A semiconductor structure comprising:
- a semiconductor substrate;
- a porous semiconductor region within said semiconductor substrate;
- a semiconductor buffer ring within said porous semiconductor region;
- a through-substrate via (TSV) within said semiconductor buffer ring;
- said porous semiconductor region and said semiconductor buffer ring causing said semiconductor structure and/or said TSV to withstand thermal and mechanical stresses.
A semiconductor structure comprising:
- a semiconductor substrate;
- a porous semiconductor region within said semiconductor substrate, wherein said porous semiconductor region is not a dielectric material;
- a through-substrate via (TSV) at least partially within said porous semiconductor region;
- said porous semiconductor region causing said semiconductor structure to withstand thermal or mechanical stress.
A semiconductor structure comprising:
- a semiconductor substrate;
- a porous semiconductor region within said semiconductor substrate;
- a semiconductor buffer ring within said porous semiconductor region;
- a through-substrate via (TSV) at least partially within said semiconductor buffer ring;
- said porous semiconductor region or said semiconductor buffer ring causing said semiconductor structure to withstand thermal or mechanical stress.
Dependencies are inferred from the claim text.