Semiconductor devices having cutouts in an encapsulation material and associated production methods

A device, comprising:

• a semiconductor chip, comprising a first main surface and a second main surface opposite the first main surface;
• a layer of encapsulation material,
• wherein all sidewalls of the semiconductor chip are covered by and in contact with the layer of encapsulation material;
• and
• a cutout arranged in the layer of encapsulation material,
• wherein the cutout, in the layer of encapsulation material, is arranged above the second main surface of the semiconductor chip,
• wherein an entirety of the second main surface is exposed to a gas, and
• wherein, in an orthogonal projection onto the second main surface, a basic area of the cutout, in the layer of encapsulation material, at least partly projects beyond a basic area of the semiconductor chip.

A device, comprising:

• a semiconductor chip, comprising a first main surface and a second main surface opposite the first main surface;
• a layer of encapsulation material,
• wherein all sidewalls of the semiconductor chip are covered by and in contact with the layer of encapsulation material;
• and
• a cutout arranged in the layer of encapsulation material,
• wherein the cutout, in the layer of encapsulation material, is arranged above the second main surface of the semiconductor chip,
• wherein an entirety of the second main surface is exposed to a gas, and
• wherein, in a projection perpendicular to the first main surface of the semiconductor chip, a basic area of the cutout, in the layer of encapsulation material, is arranged above a region of the semiconductor chip and a region of the layer of encapsulation material in which radio-frequency signals are processed or transferred.

A device, comprising:

• a semiconductor chip, comprising a first main surface and a second main surface opposite the first main surface;
• a layer of encapsulation material;
• an etch stop material arranged between sidewalls of the semiconductor chip and the layer of encapsulation material,
• wherein all sidewalls of the semiconductor chip are covered by and in contact with the etch stop material;
• and
• a cutout arranged in the layer of encapsulation material above the second main surface of the semiconductor chip,
• wherein an entirety of the second main surface is exposed to a gas, and
• wherein, in a projection perpendicular to the first main surface of the semiconductor chip, a basic area of the cutout, in the layer of encapsulation material, at least partly projects beyond a basic area of the semiconductor chip.