Manufacturing method of semiconductor module
AssigneeFuji Electric Co., Ltd.
InventorMasashi Hoya
Life of this patent
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Abstract
A manufacturing method of a semiconductor module including a trimming resistance element and a plurality of transistor chips connected mutually in parallel, in which gate electrodes are connected to one end of the trimming resistance element, including: measuring elapsed time and a gate-source voltage value when a predetermined gate current is injected into the gate electrodes and a predetermined drain current flow; calculating a gate-source capacity on the basis of the gate-source voltage value; determining a compensation gate resistance value on the basis of the gate-source voltage value and the gate-source capacity; and changing a resistance value of the trimming resistance element such that the resistance value of the trimming resistance element is conformed to the compensation gate resistance value.
Claims9
A manufacturing method of a semiconductor module comprising:
- mounting on a substrate in each of a respective first arm and a respective second arm a trimming resistance element and a plurality of transistor chips connected mutually in parallel, in which gate electrodes are connected to one end of the trimming resistance element;
- for the trimming resistance element and plurality of transistor chips mounted in each of the respective first arm and the respective second arm:
- measuring a gate characteristic of the gate electrodes comprising:
- measuring elapsed time when a predetermined gate current is injected into the gate electrodes, and a gate-source voltage value (Vgs(th)u) and a predetermined drain current flow,
- calculating a gate-source capacity (Cgsu) on the basis of the measured gate-source voltage value, and
- determining a compensation gate resistance value on the basis of the gate-source voltage value and the gate-source capacity after the elapsed time;
- and
- adjusting a resistance value based on the measured gate characteristic comprising changing a resistance value of the trimming resistance element such that the resistance value of the trimming resistance element conforms to the compensation gate resistance value;
- and
- sealing the semiconductor module by a resin.
A method of manufacturing a plurality of semiconductor modules each semiconductor module of the plurality of semiconductor modules including a trimming resistance element, a plurality of transistor chips connected mutually in parallel, in which gate electrodes are connected to one end of the trimming resistance element, and a substrate on which the plurality of transistor chips are mounted, comprising:
- for each semiconductor module of the plurality of semiconductor modules:
- measuring gate threshold voltages of the plurality of transistor chips before being mounted on the substrate;
- sorting the number of the plurality of transistor chips whose differences of the gate threshold voltages are within a predetermined range, which is required for being mounted on the substrate;
- mounting the plurality of transistor chips sorted in the sorting on the substrate;
- measuring a gate characteristic of the gate electrodes including gate threshold voltage arrival time of the plurality of transistor chips mounted on the substrate during a switching operation;
- changing a resistance value of the trimming resistance element such that the gate threshold voltage arrival time of the plurality of transistor chips mounted on the substrate during a switching operation is common among the plurality of semiconductor modules;
- and
- sealing each of the semiconductor modules by a resin.
Dependencies are inferred from the claim text.