FinFET devices

A method comprising:

• forming a first set of trenches in a semiconductor material, wherein forming the first set of trenches comprises forming a plurality of first mandrels;
• filling the first set of trenches with a first insulator material;
• and
• forming a second set of trenches in the semiconductor material, self-aligned to and alternating with the first set of trenches, to form a plurality of fins with the first insulator material still present,
• wherein a pitch of the first set of trenches is approximately one-half a pitch of the plurality of the first mandrels.

A method comprising:

• forming a first set of trenches in a semiconductor material, wherein forming the first set of trenches comprises forming a plurality of first mandrels and forming first sidewall spacers on the first mandrels;
• filling the first set of trenches with a first insulator material;
• and
• forming a second set of trenches in the semiconductor material, self-aligned to and alternating with the first set of trenches, to form a plurality of fins,
• wherein a pitch of the plurality of fins is approximately one-quarter a pitch of the plurality of first mandrels.

A method comprising:

• forming a first set of trenches in a semiconductor material, wherein forming the first set of trenches comprises forming a plurality of first mandrels;
• filling the first set of trenches with a first insulator material;
• and
• forming a second set of trenches in the semiconductor material, self-aligned to and alternating with the first set of trenches, to form a plurality of fins with the first insulator material still present,
• wherein a pitch of the plurality of fins is approximately one-quarter a pitch of the plurality of first mandrels.

A method comprising:

• forming a first set of trenches in a semiconductor material, wherein forming the first set of trenches comprises forming a plurality of first mandrels and forming first sidewall spacers on the first mandrels, and wherein forming the first set of trenches comprises (i) removing the plurality of first mandrels and (ii) etching trenches through spaces between the first sidewall spacers;
• filling the first set of trenches with a first insulator material;
• and
• forming a second set of trenches in the semiconductor material, self-aligned to and alternating with the first set of trenches, to form a plurality of fins.