Dummy fin template to form a self-aligned metal contact for output of vertical transport field effect transistor
AssigneeInternational Business Machines Corporation
InventorsJunli Wang, Brent Alan Anderson, Albert Young
Life of this patent
Estimating the term…
Abstract
A technique relates to a semiconductor device. A source/drain layer is formed. Fins with gate stacks are formed in a fill material, a dummy fin template including at least one fin of the fins and at least one gate stack of the gate stacks, the fins being formed on the source/drain layer. A trench is formed through the fill material by removing the dummy fin template, such that a portion of the source/drain layer is exposed in the trench. A source/drain metal contact is formed on the portion of the source/drain layer in the trench.
Claims15
A method of forming a semiconductor device, the method comprising:
- forming a plurality of fins;
- forming a source/drain layer adjacent to the fins;
- forming a shallow trench isolation region adjacent to the source/drain layer;
- forming gate stacks surrounding the fins, a dummy fin template comprising at least one fin of the fins and at least one of the gate stacks surrounding the at least one fin, fill material being on the gate stacks;
- forming a trench through the fill material by removing the dummy fin template, such that a portion of the source/drain layer is exposed in the trench, the shallow trench isolation region separating the portion of the source/drain layer from another portion of the source/drain layer, wherein the another portion is coupled to a buried power rail through a conductive via and is coupled to a first fin of the fins, a second fin of the fins being coupled to the portion;
- and
- forming a source/drain metal contact on the portion of the source/drain layer in the trench.
A method of forming a semiconductor device, the method comprising:
- forming fins;
- forming a source/drain layer adjacent to the fins;
- forming a shallow trench isolation region adjacent to the source/drain layer;
- forming gate stacks surrounding the fins;
- removing one of the fins and a corresponding one of the gate stacks at a location so as to expose a portion of the source/drain layer, the shallow trench isolation region separating the portion of the source/drain layer from another portion of the source/drain layer, wherein the another portion is coupled to a buried power rail through a conductive via and is coupled to a first fin of the fins, a second fin of the fins being coupled to the portion;
- and
- forming a metal contact at the location in which the one of the fins and the corresponding one of the gate stacks have been removed.
Dependencies are inferred from the claim text.