Field effect transistor with an atomically thin channel

A method for producing a transistor wherein a channel structure includes one or more fin(s), the method comprising the steps of:

• forming on a substrate one or more blocks referred to as moulding blocks,
• forming on said one or more moulding blocks a thin layer based on a given semiconductor or semi-metallic material, and consisting of one to ten atomic or molecular monolayer(s) of two-dimensional crystal, then,
• forming one or more holding blocks respectively at one or more ends of the moulding blocks, then
• forming a masking covering the moulding blocks and the holding blocks,
• partially removing the masking, a thickness of the masking being removed so as to reveal a top portion of the moulding blocks and the holding blocks, and removing said thin layer at the level of the top portion of the moulding blocks,
• removing said one or more moulding blocks while retaining one or more portion(s) of the thin layer extending against at least one lateral face of said moulding blocks, said one or more retained portions forming one or more fin(s) for forming a channel structure of the transistor, the removal of said moulding blocks being carried out by selective etching with respect to the material of said one or more holding blocks, said one or more holding blocks being for ensuring mechanical strength of said one or more fin(s) during the removal of said one or more moulding blocks, then
• removing the rest of the masking, then
• producing a gate electrode against said one or more fin(s).