Method of forming semiconductor device
AssigneeUnited Microelectronics Corp.
InventorsWen-Wu Wan, Tien-Hsiang Cheng, Kun-Hsuan Chung
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Abstract
The present invention relates to a semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure, an insulating stacked structure and a first conductive layer. The gate structure is disposed on the substrate, and the insulating stacked structure covers the gate structure and the substrate to define a first opening thereinto expose a portion of the gate structure and a portion of the substrate. The first conductive layer covers surfaces of the first opening to directly contact the portion of the substrate and the portion of the gate structure, with the first conductive layer including two outer extension wings on a top surface of the insulating stacked structure.
Claims5
A method of forming semiconductor device, comprising:
- providing a substrate;
- forming a gate structure on the substrate;
- conformally forming an insulating stacked structure on the substrate, covering the gate structure and the substrate;
- forming a first opening in the insulating stacked structure to expose a portion of the gate structure;
- forming a first conductive layer on surfaces of the first opening to directly contact the portion of the gate structure, wherein the first conductive layer comprises two outer extension wings on a top surface of the insulating stacked structure;
- forming a dielectric layer only covering on the two outer extension wings of the first conductive layer;
- and
- forming a plug in the first opening, the dielectric layer only being sandwiched between the plug and the two outer extension wings.
Dependencies are inferred from the claim text.