Semiconductor device
AssigneeToshiba Memory Corporation
InventorMinoru Oda
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor substrate, a source or drain layer provided in the semiconductor substrate, a gate insulation layer provided on a surface of the semiconductor substrate, and a gate electrode that is provided on the gate insulation layer. The semiconductor device further includes a first contact that is provided on the source or drain layer, the first contact including a stacked body in which a plurality of first layers and one or more second layers are alternately stacked, and a second contact that faces at least one of a side surface and an upper surface of the first contact disposed on the source or drain layer.
Claims13
A semiconductor device comprising:
- a semiconductor substrate;
- a first source or drain layer and a second source or drain layer that are provided in the semiconductor substrate;
- a gate insulation layer provided on a portion of a surface of the semiconductor substrate located between the first and second source or drain layers;
- a gate electrode that is provided on the gate insulation layer;
- a first contact that is provided on the first source or drain layer and a first contact that is provided on the second source or drain layer, each of the first contacts including a stacked body in which a plurality of first layers and one or more second layers are alternately stacked;
- and
- a second contact that faces at least one of a side surface and an upper surface of the first contact disposed on the first source or drain layer, or faces a side surface and an upper surface of the first contact disposed on the second source or drain layer,
- wherein a dimension of the one or more second layers in a direction parallel to the surface of the semiconductor substrate is smaller than a dimension of the first layers in the direction parallel to the surface of the semiconductor substrate.
A semiconductor device comprising:
- a semiconductor substrate comprising a source or drain layer adjacent to a surface of the semiconductor substrate;
- a first contact provided on the first source or drain layer comprising a plurality of first layers and one or more second layers, the first layers and the one or more second layers being alternately stacked, and a side surface of the first contact defining one or more recesses;
- and
- a second contact disposed around the first contact and in the one or more recesses,
- wherein a dimension of the one or more second layers in a direction parallel to the surface of the semiconductor substrate is smaller than a dimension of the first layers in the direction parallel to the surface of the semiconductor substrate.
Dependencies are inferred from the claim text.