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US 11,145,543 B2Granted
Semiconductor via structure with lower electrical resistance
AssigneeInternational Business Machines Corporation
InventorsLawrence A. Clevenger, Baozhen Li, Kirk D. Peterson, Terry A. Spooner, Junli Wang
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Abstract
A semiconductor device and method of making the same, wherein in accordance with an embodiment of the present invention, the device includes a first conductive line including a first conductive material, and a second conductive line including a second conductive material. A via connects the first conductive line to the second conductive line, wherein the via includes conductive via material, wherein the via material top surface is coated with a liner material, wherein the via is a bottomless via.
Claims9
A method of forming a device, comprising:
- providing a first conductive line including a first conductive material and a second conductive line, wherein the first conductive line and second conductive line are connected by a via, wherein the via includes two via side walls and a via bottom surface;
- depositing a first liner material along inner surfaces of the via side walls and the via bottom surface;
- removing the first liner material from the via bottom surface;
- depositing a via material into the via forming a via material top surface, wherein the via material top surface is curved;
- and
- depositing a second liner material that covers the via material such that the via material top surface of the via material extends above and away from a bottom surface of the second liner material.
3 more elements
Dependencies are inferred from the claim text.