Global dielectric and barrier layer

A semiconductor device, comprising

• a first interconnect feature and a second interconnect feature within an inter-layer dielectric disposed over a substrate;
• a metal containing layer interfacing the first interconnect feature, the second interconnect feature, and the inter-layer dielectric, wherein the metal containing layer includes a first portion interfacing the first interconnect feature, a second portion interfacing the inter-layer dielectric and a third portion interfacing the second interconnect feature, wherein the first portion, the second portion, and the third portion are contiguous, coplanar, and include a same metal, wherein the first portion and the third portion each has a first resistivity and the second portion has a second resistivity greater than the first resistivity, the same metal is at least one of aluminum (Al), tantalum (Ta), manganese (Mn), ruthenium (Ru), tin (Sn), or magnesium (Mg);
• and
• another interconnect feature over the substrate and the metal containing layer also interfacing the another interconnect feature, wherein the another interconnect feature includes a conductive material directly interfacing the first portion and the second portion of the metal containing layer and having a terminal edge over the second portion of the metal containing layer.

A device comprising:

• a substrate having a first conductive feature, a second conductive feature, and a first dielectric material extending between the first and second conductive features;
• a first layer directly over the first dielectric material, a second layer directly over the first conductive feature, and a third layer directly over the second conductive feature, wherein the first layer is a metal oxynitride and the second layer and the third layer are a metal nitride;
• a capping layer over the first layer and interfacing a top surface of the first layer and over the third layer and interfacing a top surface of the third layer;
• a second dielectric material over the capping layer, wherein the second dielectric material includes an opening extending through the capping layer;
• and
• a second conductive feature comprising a barrier layer and a metal layer disposed in the opening and on the second layer and the first layer, wherein the second conductive feature is electrically coupled to the first conductive feature by the second layer and interfaces a top surface of the first layer.