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US 11,145,522 B2Granted
Method of forming boron-based film, and film forming apparatus
AssigneeTokyo Electron Limited
InventorsYoshimasa Watanabe, Masahiro Oka, Hirokazu Ueda, Yuuki Yamamoto
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Abstract
A method of forming a boron-based film includes forming the boron-based film mainly containing boron on a substrate by plasma CVD using plasma of a processing gas including a boron-containing gas; and controlling film stress of the formed boron-based film by adjusting a process parameter.
Claims11
A method of forming a boron-based film, comprising:
- setting process parameters to a value for obtaining a required film stress of the boron-based film;
- and
- subsequently, forming the boron-based film mainly containing boron on a substrate by plasma Chemical Vapor Deposition (CVD) using plasma of processing gases including a boron-containing gas and a rare gas supplied together with the boron-containing gas,
- wherein the process parameters include a type of the rare gas supplied together with the boron-containing gas, and the rare gas is composed of at least one of a He gas and an Ar gas,
- wherein
- a proportion of the Ar gas in the rare gas relative to the He gas is set to an increased value to obtain a decreased compressive stress of the boron-based film and set to a decreased value to obtain an increased compressive stress of the boron-based film, wherein the proportion of the Ar gas in the rare gas ranges from 0% to 100% and the proportion of the He gas in the rare gas ranges from 0% to 100%.
3 more elements
Dependencies are inferred from the claim text.