Method for cleaning a semiconductor substrate

A method of cleaning a semiconductor substrate, consisting of sequential steps of:

• applying a first agent to a top surface of the semiconductor substrate while rotating the semiconductor substrate at a first rotational frequency;
• and
• immersing the semiconductor substrate in a second agent while the semiconductor substrate is stationary during the immersing step;
• wherein each of the first agent and the second agent consists of deionized water,
• wherein the second agent has a resistivity in a range of about 1×105 Ω·m to about 3×105 Ω·m, and
• wherein each of the steps is performed at a temperature in a range of from about 23 degrees Celsius to about 25 degrees Celsius.

A method of cleaning a semiconductor substrate consisting of sequential steps of:

• applying a first agent to a top surface of the semiconductor substrate while rotating the semiconductor substrate at a first rotational frequency;
• immersing the semiconductor substrate in a second agent while the semiconductor substrate is stationary;
• and
• rotating the semiconductor substrate at a third rotational frequency while introducing a third agent to the top surface of the semiconductor substrate;
• wherein the first agent, the second agent and the third agent are a same liquid cleaning agent, the first rotational frequency is greater than the third rotational frequency, and the third rotational frequency is greater than zero,
• wherein each of the first agent, the second agent, and the third agent consists of deionized water, and
• wherein each of the steps is performed at a temperature in a range of from about 23 degrees Celsius to about 25 degrees Celsius.