Substrate processing method and substrate processing apparatus

A substrate processing method which processes a substrate having a surface in which a plurality of recessed parts is formed, the substrate processing method comprising:

• a processing target layer removing process, etching and removing at least a part of a processing target layer by supplying an etching solution having a constant etching rate for the processing target layer to the surface of the substrate regardless of a density of a crystal grain boundary of a processing target material in the processing target layer formed in the recessed part in a manner of a surface of the processing target layer is exposed,
• wherein the etching solution contains an organic acid as a reaction compound which reacts with the processing target material when the processing target layer is etched,
• the organic acid has a size larger than a gap present in the crystal grain boundary.

A substrate processing method which processes a substrate having a surface in which a plurality of recessed parts is formed, the substrate processing method comprising:

• a processing target layer removing process, etching and removing at least a part of a processing target layer by supplying an etching solution, of which an etching rate for a crystal grain of a processing target material in the processing target layer formed in the recessed part in a manner of a surface of the processing target layer is exposed is equal to an etching rate for a crystal grain boundary in the processing target layer, to the surface of the substrate, and
• a processing target layer forming process, forming the processing target layer by supplying a denaturalization fluid on the surface of the substrate and denaturalizing a surface layer of a layer to be denaturalized which is formed in the recessed part in a manner of a surface of the layer to be denaturalized is exposed.

A substrate processing method which processes a substrate having a surface in which a plurality of recessed parts is formed, the substrate processing method comprising:

• a processing target layer removing process, etching and removing at least a part of a processing target layer by supplying an etching solution, of which an etching rate for a crystal grain of a processing target material in the processing target layer formed in the recessed part in a manner of a surface of the processing target layer is exposed is equal to an etching rate for a crystal grain boundary in the processing target layer, to the surface of the substrate,
• wherein the processing target layer removing process comprises a polysilicon layer removing process, removing a surface layer of a polysilicon layer as the processing target layer from the surface of the substrate by supplying a basic chemical solution as the etching solution.

A substrate processing method which processes a substrate having a surface in which a plurality of recessed parts is formed, the substrate processing method comprising:

• a processing target layer removing process, etching and removing at least a part of a processing target layer by supplying an etching solution, of which an etching rate for a crystal grain of a processing target material in the processing target layer formed in the recessed part in a manner of a surface of the processing target layer is exposed is equal to an etching rate for a crystal grain boundary in the processing target layer, to the surface of the substrate, and
• an etching solution type selection process, selecting a type of the etching solution supplied to the surface of the substrate in the processing target layer removing process from a plurality of types of etching solutions according to widths of the plurality of recessed parts so that the etching rate for the crystal grain is equal to the etching rate for the crystal grain boundary.