Removal liquid and method for removing oxide of group III-V element, treatment liquid for treating compound of group III-V element, oxidation prevention liquid for preventing oxidation of group III-V element, treatment liquid for treating semiconductor substrate, and method for producing semiconductor substrate product

A treatment liquid for treating a semiconductor substrate, comprising:

• an acid;
• and
• a mercapto compound having 3 to 12 carbon atoms,
• wherein the mercapto compound contains a thiol group and at least one of a carboxyl group,
• the content of the acid is 0.05 mass% or more and 20 mass% or less,
• the content of the mercapto compound is 0.01 mass% or more and 10 mass% or less, and
• a content ratio in terms of mass ratio between the content of the mercapto compound and the content of the acid is from 0.3 to 500.

A removal method for removing an oxide of a Group III-V element, comprising:

• applying a treatment liquid containing an acid and a mercapto compound to an oxide of a Group III-V element to remove the oxide of a Group III-V element,
• wherein the mercapto compound is represented by the following Formula (1) or (4)
• where R1 to R5 are each independently a hydrogen atom, a thiol group, a hydroxyl group, a carboxyl group, an alkyl group, an alkenyl group, an aryl group, an aralkyl group, an amino group, an acyl group, or an acylamino group, and R1 to R5 may be bonded to one another to form a ring;
• m and n are an integer and m+n is an integer of 1 to 12;
• one or more of R1 to R5 in a molecule are present as a carboxyl group or a hydroxyl group;
• A is a carboxyl group or a hydroxyl group;
• R6 is an alkyl group, an alkenyl group, an aryl group, an aralkyl group, an amino group, an acyl group, or an acylamino group;
• HA represents a structure obtained by removing m3+n3+p3 number of hydrogen atoms from a pyridine ring;
• and
• n3 is an integer of 1 to 4 and m3 is an integer of 0 to 5, and p3 is an integer of 1 to 4,
• wherein the treatment is carried out under a condition that light of 500 nm or less is blocked.

A treatment liquid for treating a compound of a Group III-V element, comprising:

• hydrochloric acid or hydrofluoric acid;
• and
• a mercapto compound,
• wherein the mercapto compound contains a thiol group and at least one carboxyl group,
• the content of the acid is 0.05 mass% or more and 20 mass% or less,
• the content of the mercapto compound is 0.01 mass% or more and 10 mass% or less, and
• a content ratio in terms of mass ratio between the content of the mercapto compound and the content of the acid is from 0.3 to 500.

An oxidation prevention liquid for preventing the oxidation of a Group III-V element, comprising:

• hydrochloric acid or hydrofluoric acid;
• and
• a mercapto compound,
• wherein the mercapto compound contains a thiol group and at least one carboxyl group,
• the content of the acid is 0.05 mass% or more and 20 mass% or less,
• the content of the mercapto compound is 0.01 mass% or more and 10 mass% or less, and
• a content ratio in terms of mass ratio between the content of the mercapto compound and the content of the acid is from 0.3 to 500.

A treatment liquid for treating a semiconductor substrate comprising a Group III-V element, containing an acid and a mercapto compound having 3 to 12 carbon atoms,

• wherein the mercapto compound contains a thiol group and at least one carboxyl group,
• the content of the acid is 0.05 mass% or more and 20 mass% or less,
• the content of the mercapto compound is 0.01 mass% or more and 10 mass% or less, and
• a content ratio in terms of mass ratio between the content of the mercapto compound and the content of the acid is from 0.3 to 500.

A treatment liquid for treating a semiconductor substrate comprising a Group III-V element, containing an acid and a mercapto compound having 1 to 12 carbon atoms,

• wherein the mercapto compound contains one or more and four or less thiol groups within a molecule and at least one carboxyl group,
• the content of the acid is 0.05 mass% or more and 20 mass% or less,
• the content of the mercapto compound is 0.01 mass% or more and 10 mass% or less, and
• a content ratio in terms of mass ratio between the content of the mercapto compound and the content of the acid is from 0.3 to 500.

A removal method for removing an oxide of InGaAs or InP, comprising:

• applying a treatment liquid containing an acid and a mercapto compound to InGaAs or InP to remove the oxide InGaAs or InP,
• wherein the mercapto compound is represented by the following Formula (1) or (4)
• where R1 to R5 are each independently a hydrogen atom, a thiol group, a hydroxyl group, a carboxyl group, an alkyl group, an alkenyl group, an aryl group, an aralkyl group, an amino group, an acyl group, or an acylamino group, and R1 to R5 may be bonded to one another to form a ring;
• m and n are an integer and m+n is an integer of 1 to 12;
• one or more of R1 to R5 in a molecule are present as a carboxyl group or a hydroxyl group;
• A is a carboxyl group or a hydroxyl group;
• R6 is an alkyl group, an alkenyl group, an aryl group, an aralkyl group, an amino group, an acyl group, or an acylamino group;
• HA represents a structure obtained by removing m3+n3+p3 number of hydrogen atoms from a pyridine ring;
• and
• n3 is an integer of 1 to 4 and m3 is an integer of 0 to 5, and p3 is an integer of 1 to 4,
• wherein the content of the acid is 0.05 mass% or more and 20 mass% or less,
• the content of the mercapto compound is 0.01 mass% or more and 10 mass% or less, and
• a content ratio in terms of mass ratio between the content of the mercapto compound and the content of the acid is from 0.3 to 500.

A removal method for removing an oxide of a Group III-V element, comprising:

• applying a treatment liquid containing an acid and a mercapto compound to an oxide of a Group III-V element to remove the oxide of a Group III-V element,
• wherein the mercapto compound has at least one of a carboxyl group or a hydroxyl group, and a thiol group,
• the content of the acid is 0.05 mass% or more and 20 mass% or less,
• the content of the mercapto compound is 0.01 mass% or more and 10 mass% or less, and
• a content ratio in terms of mass ratio between the content of the mercapto compound and the content of the acid is from 0.3 to 500.

A removal method for removing an oxide of a Group III-V element, comprising:

• applying a treatment liquid containing an acid and a mercapto compound to an oxide of a Group III-V element to remove the oxide of a Group III-V element,
• wherein the mercapto compound is represented by the following Formula (1) or (4)
• where R1 to R5 are each independently a hydrogen atom, a thiol group, a hydroxyl group, a carboxyl group, an alkyl group, an alkenyl group, an aryl group, an aralkyl group, an amino group, an acyl group, or an acylamino group, and R1 to R5 may be bonded to one another to form a ring;
• m and n are an integer and m+n is an integer of 1 to 12;
• one or more of R1 to R5 in a molecule are present as a carboxyl group or a hydroxyl group;
• A is a carboxyl group or a hydroxyl group;
• R6 is an alkyl group, an alkenyl group, an aryl group, an aralkyl group, an amino group, an acyl group, or an acylamino group;
• HA represents a structure obtained by removing m3+n3+p3 number of hydrogen atoms from a pyridine ring;
• and
• n3 and m3 are an integer of 0 to 5, and p3 is an integer of 1 to 4;
• wherein the treatment is carried out under a condition that light of 500 nm or less is blocked.