Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• providing a semiconductor wafer comprising:
• a substrate,
• a semiconductor element disposed on an upper surface of the substrate,
• an insulating layer disposed on the upper surface of the substrate and defining a first opening located above the semiconductor element, and
• a conductive layer disposed on the semiconductor element in the first opening;
• forming a photoresist on the upper surface of the semiconductor wafer, wherein the photoresist defines a second opening above the first opening, and wherein, in a plan view, a maximum width of the second opening is larger than a maximum width of the first opening;
• and
• forming an electrode in the first opening and the second opening using a plating technique, wherein the step of forming the electrode comprises:
• forming a first plated layer at a first current density, such that the first plated layer has a first thickness, and such that an upper surface of the first plated layer is substantially planar in an entirety of the second opening, and
• forming a second plated layer on an upper surface of the first plated layer at a second current density higher than the first current density such that the second plated layer has a second thickness greater than the first thickness.