Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

A substrate processing apparatus comprising:

• a process vessel constituting at least a part of a process chamber where a substrate is processed;
• a plasma generator comprising a coil provided to be wound around an outer periphery of the process vessel and a high frequency power supply configured to supply high frequency power to the coil;
• a substrate support provided in the process chamber and below a lower end of the coil;
• a heater provided in the substrate support;
• and
• a temperature sensor configured to measure a temperature of a portion of the process vessel located above an upper end of the coil,
• wherein the temperature sensor is provided so as to measure the temperature of the process vessel at a predetermined height of 15 mm or more and 30 mm or less from the upper end of the coil.

A method of manufacturing a semiconductor device comprising:

• (a) providing a substrate processing apparatus comprising:
• a process vessel constituting at least a part of a process chamber where a substrate is processed;
• a plasma generator comprising a coil provided to be wound around an outer periphery of the process vessel and a high frequency power supply configured to supply high frequency power to the coil;
• a substrate support provided in the process chamber and below a lower end of the coil;
• a heater provided in the substrate support;
• and
• a temperature sensor configured to measure a temperature of a portion of the process vessel located above an upper end of the coil;
• (b) supplying a first process gas into the process vessel;
• (c) generating a plasma of the first process gas supplied into the process vessel by supplying the high frequency power to the coil while measuring the temperature of the portion of the process vessel located above the upper end of the coil by the temperature sensor until the temperature measured by the temperature sensor is equal to or higher than a first temperature;
• (d) placing the substrate on the substrate support after (c);
• (e) supplying a second process gas into the process vessel;
• and
• (f) generating a plasma of the second process gas supplied into the process vessel by supplying the high frequency power to the coil and processing the substrate placed on the substrate support by the plasma of the second process gas.