Beam profile determination method and ion beam irradiation apparatus
AssigneeNissin Ion Equipment Co., Ltd.
InventorYutaka Inouchi
Life of this patent
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Abstract
A beam profile determination method and ion implantation apparatus implanting the same is provided. The method includes measuring a beam profile of an ion beam in a direction orthogonal to a scanning direction of a substrate and a traveling direction of the ion beam; computing, based on the measured beam profile, a uniformity of a dose distribution of a part of the ion beam with which a surface of the substrate is irradiated when the substrate is scanned; and comparing the computed uniformity of the dose distribution with a first reference value to determine an adequacy of the beam profile of the ion beam.
Claims20
A beam profile determination method comprising:
- measuring a beam profile of an ion beam in a direction orthogonal to a scanning direction of a substrate and a traveling direction of the ion beam;
- computing, based on the measured beam profile, a uniformity of a dose distribution of the ion beam with which a surface of the substrate is irradiated when the substrate is scanned by projecting the ion beam onto a plurality of areas of the surface and averaging beam current density values in a plurality of projected ion beam segments each corresponding to a respective one of the plurality of areas;
- and
- comparing the computed uniformity of the dose distribution with a first reference value to determine an adequacy of the beam profile of the ion beam.
An ion beam irradiation apparatus comprising:
- a beam profiler configured to measure a beam profile of an ion beam in a direction orthogonal to a scanning direction of a substrate and a traveling direction of the ion beam;
- and
- a control device configured to:
- compute, based on the measured beam profile, a uniformity of a dose distribution of the ion beam with which a surface of the substrate is irradiated when the substrate is scanned by projecting the ion beam onto a plurality of areas of the surface and averaging beam current density values in a plurality of projected ion beam segments each corresponding to a respective one of the plurality of areas;
- and
- compare the computed uniformity of the dose distribution with a first reference value to determine an adequacy of the beam profile of the ion beam.
A beam profile determination method comprising:
- measuring a beam profile of an ion beam in a direction orthogonal to a scanning direction of a substrate and a traveling direction of the ion beam;
- computing, based on the measured beam profile, a uniformity of a dose distribution in a surface of the substrate by projecting the ion beam onto a plurality of areas of the surface and averaging beam current density values in a plurality of projected ion beam segments each corresponding to a respective one of the plurality of areas;
- and
- comparing the computed uniformity of the dose distribution with a first reference value to determine an adequacy of the beam profile of the ion beam.
Dependencies are inferred from the claim text.