Memory device and operating method using the same

An operating method of a memory device having a plurality of memory cells, the method comprising:

• applying a program pulse to at least one memory cell among the plurality of memory cells to set the at least one memory cell to a target state;
• performing a verify operation to determine whether the at least one memory cell reaches the target state after applying the program pulse;
• classifying failed memory cells to a plurality of cell classifications based on distances from the failed memory cells to the target state in response to determining that at least one of the at least one memory cell does not reach the target state, wherein the failed memory cells are memory cells that do not reach the target state after applying the program pulse;
• adjusting the program pulse to generate an adjusted program pulse for each of the plurality of cell classifications according to the distances from the failed memory cells to the target state, wherein adjusting at least one of the pulse-width of the program pulse or an amplitude of the program pulse comprises:
• increasing the at least one of a pulse width of the program pulse or the amplitude of the program pulse as distances from the failed memory cells to the target state increase;
• and
• decreasing the at least one of the pulse width of the program pulse or the amplitude of the program pulse as the distances from the failed memory cells to the target state decrease;
• and
• applying the adjusted program pulse that is generated for a cell classification among the plurality of cell classifications to the failed memory cells of the cell classification.

A memory device, comprising:

• a memory array, comprising a plurality of memory cells;
• a program circuit, coupled to the memory array, and configured to apply a program pulse to at least one memory cell among the plurality of memory cells to set the at least one memory cell to a target state;
• a verify circuit, coupled to the memory array, and configured to perform a verify operation to determine whether the at least one memory cell reaches a predetermine threshold and to determine a number of failed memory cells among the at least one memory cell in response to determining that at least one of the at least one memory cell does not reach the target state, wherein the failed memory cells are memory cells that do not reach the target state after applying the program pulse;
• and
• a controller, coupled to the verify circuit, configured to adjust the program pulse according to the number of the failed memory cells to generate an adjusted program pulse, wherein the controller increases at least one of a pulse width of the program pulse or an amplitude of the program pulse as the number of the failed memory cells increases, and the controller decreases the at least one of the pulse width of the program pulse or the amplitude of the program pulse as the number of the failed memory cells decreases,
• wherein the program circuit is further configured to apply the adjusted program pulse to the failed memory cells to set the failed memory cells to the target state.