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US 11,145,380 B1Granted
Analog nonvolatile memory cells using dopant activation
AssigneeInternational Business Machines Corporation
InventorsHeng Wu, Tenko Yamashita, Oleg Gluschenkov, Alexander Reznicek
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Abstract
Memory cells and methods of forming and operating the same include forming a doped crystalline semiconductor memory layer on a first electrode. The doped crystalline semiconductor memory layer has a programmable dopant activation level that determines a resistance of the doped crystalline semiconductor memory layer. A second electrode is formed on the doped crystalline semiconductor memory layer.
Claims15
A method of forming a memory cell, comprising:
- forming a doped crystalline semiconductor memory layer on a first electrode, the doped crystalline semiconductor memory layer having a programmable dopant activation level that determines a resistance of the doped crystalline semiconductor memory layer;
- and
- forming a second electrode on the doped crystalline semiconductor memory layer.
A memory cell, comprising:
- a conductive first electrode;
- a doped crystalline semiconductor memory layer on the first electrode, having a programmable dopant activation level that determines a resistance of the doped crystalline semiconductor memory layer;
- and
- a conductive second electrode on the doped crystalline semiconductor memory layer.
1 more element
Dependencies are inferred from the claim text.