Method for programming flash memory device and flash memory system
AssigneeMacronix International Co., Ltd.
InventorsYa-Jui Lee, Kuan-Fu Chen
Life of this patent
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Abstract
A method for programming a memory device and a memory system are provided, wherein the method for programming the memory device includes steps below. First, a program command is proposed. Second, a width of a pulse about to provide to strings of memory cells of the memory device is determined according to a temperature data of the memory device. Then, the pulse is provided to the strings of memory cells to start doing a program operation. The width of the pulse becomes narrower as a temperature of the memory device is raised.
Claims10
A method for programming a flash memory device, comprising:
- proposing a program command;
- determining a width of a pulse about to provide to strings of memory cells of the flash memory device according to a temperature data of the flash memory device;
- and
- providing the pulse to the strings of memory cells to start doing a program operation,
- wherein in the step of providing the pulse to the strings of memory cells, the pulse comprises a program pulse and a pass pulse, the program pulse is provided to the strings of memory cells by a selected word line, and the pass pulse is provided to the strings of memory cells by unselected word lines,
- wherein the width of the pass pulse becomes narrower as a temperature of the flash memory device is raised.
A flash memory system, comprising:
- a flash memory device, comprising:
- a memory cell array, comprising a plurality of strings of memory cells;
- an address decoder, coupled to the memory cell array;
- a voltage generator, coupled to the address decoder and configured to generate a pulse provided to the strings of memory cells;
- a page buffer, coupled to the memory cell array;
- and
- a control logic, coupled to the address decoder, the voltage generator and the page buffer;
- a controller, coupled to the flash memory device, and configured to propose a program command to the flash memory device;
- and
- a temperature sensor, configured to acquire a temperature data of the flash memory device, wherein the temperature sensor is located in the flash memory device or the controller,
- wherein the control logic determines a width of the pulse about to provide to the plurality of strings of memory cells of the flash memory device according to the temperature data of the flash memory device,
- wherein the pulse comprises a program pulse and a pass pulse, the program pulse is provided to a selected memory cell in the strings of memory cells by a selected word line, and the pass pulse is provided to unselected memory cells in the strings of memory cells by unselected word lines,
- wherein the width of the pass pulse becomes narrower as a temperature of the flash memory device is raised.
Dependencies are inferred from the claim text.