Method for programming memory system
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsKe Liang, Chun Yuan Hou, Qiang Tang
Life of this patent
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Abstract
A method for programming a memory system including a plurality of memory cells includes performing a first program operation on the plurality of the memory cells. The method also includes identifying a first memory cell and a second set of memory cell from the plurality of memory cells based on threshold voltages of the plurality of memory cells after performing the first program operations. The method further includes performing a second operation on the plurality of the memory cells by applying a first cross voltage to the first memory cell and a second cross voltage to the second memory cell.
Claims20
A method for programming a memory system comprising a plurality of memory cells, the method comprising:
- performing a first program operation on the plurality of the memory cells;
- identifying a first memory cell and a second memory cell from the plurality of memory cells based on threshold voltages of the plurality of memory cells after performing the first program operation;
- and
- performing a second operation on the plurality of the memory cells by applying a first cross voltage to the first memory cell and a second cross voltage to the second memory cell.
A memory system, comprising:
- a plurality of memory cells, each comprising a storage element having a first terminal, and a control terminal coupled to a word line;
- a word line driver coupled to the word line;
- and
- a plurality of voltage controllers, each coupled to a first terminal of a storage element of a corresponding memory cell of the plurality of memory cells,
- wherein the word line driver and the voltage controllers are configured to:
- perform a first program operation on the plurality of the memory cells;
- identify a first memory cell and a second memory cell from the plurality of memory cells based on threshold voltages of the plurality of memory cells after performing the first program operation;
- and
- perform a second operation on the plurality of memory cells by applying a first cross voltage to the first memory cell and a second cross voltage to the second memory cell.
Dependencies are inferred from the claim text.